| Presentation | 1999/7/23 Integration of Split Word Line Ferroelectric Memories Using Etch Stopping Layers and Multi-Layer Etching Technology Hyo-Jin Nam, Seong-Moon Cho, William Jo, Heon-Min Lee, Dong-Chun Kim, Hee-Bok Kang, Ki-Young Oh, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Split word line ferroelectric random access memories (SAVE FeRAMs) were fabricated using etch stopping layers and multi-layer etching technology. As the SWL FeRAM does not use a common CP line, the operation speed can be enhanced and the decrease of remnant polarization of non-selected cell capacitors can be prevented in write/read operation. The cell capacitors were composed of Pt electrodes and the sol-get derived Pb(Zr,Ti)O_3 films. The ferroelectric capacitors were formed by etching a metal-ferroelectric-metal (MFM) and a metal-ferroelectric (MF) using Ru and Ti masks with a good etch selectivity, which could simplify the etching process. The etch stopping layers of RuO_2 and TiO_2 were introduced to solve the over-etching problem of BPSG. The degradation of the ferroelectric capacitors due to etching process and interlayer dielectric (ILD) deposition process was almost recovered by annealing in oxygen. Memory operation was confirmed in the 2T/2C SWL FeRAM with the capacitor area down to 16 μm^2. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | ferroelectric / sol-get / PZT film / FeRAM / Pt electrode |
| Paper # | SDM99-110 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1999/7/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Integration of Split Word Line Ferroelectric Memories Using Etch Stopping Layers and Multi-Layer Etching Technology |
| Sub Title (in English) | |
| Keyword(1) | ferroelectric |
| Keyword(2) | sol-get |
| Keyword(3) | PZT film |
| Keyword(4) | FeRAM |
| Keyword(5) | Pt electrode |
| 1st Author's Name | Hyo-Jin Nam |
| 1st Author's Affiliation | LG Corporate Institute of Technology() |
| 2nd Author's Name | Seong-Moon Cho |
| 2nd Author's Affiliation | LG Corporate Institute of Technology |
| 3rd Author's Name | William Jo |
| 3rd Author's Affiliation | LG Corporate Institute of Technology |
| 4th Author's Name | Heon-Min Lee |
| 4th Author's Affiliation | LG Corporate Institute of Technology |
| 5th Author's Name | Dong-Chun Kim |
| 5th Author's Affiliation | LG Corporate Institute of Technology |
| 6th Author's Name | Hee-Bok Kang |
| 6th Author's Affiliation | LG Semicon |
| 7th Author's Name | Ki-Young Oh |
| 7th Author's Affiliation | LG Semicon |
| Date | 1999/7/23 |
| Paper # | SDM99-110 |
| Volume (vol) | vol.99 |
| Number (no) | 232 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |