Presentation 1999/7/23
Deposition and Characterization of Ru Thin Films Prepared by Metallorganic Chemical Vapor Deposition
Sang Yeol Kang, Kook Hyun Choi, Seok Kiu Lee, Cheol Seong Hwang, Hyeong Joon Kim,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Ru thin films were deposited at 300℃~400℃ using RU(C_5H_4C_2H_5)_2 (Ru(EtCp)_2) as a precursor by low-pressure metal-organic chemical-vapor deposition (LP-MOCVD). The addition of O_2 gas is essential to form Ru thin films. The deposition rates of the films were about 200Å/min. At a lower oxygen addition and high substrate temperature, RUO_2 phases were formed. Thermodynamic calculation for Ru MOCVD were performed to explain the results of our experiments.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Ru thin film / High Dielectric thin films / MOCVD / DRAM capacitor
Paper # SDM99-109
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Conference Information
Committee SDM
Conference Date 1999/7/23(1days)
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Registration To Silicon Device and Materials (SDM)
Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Deposition and Characterization of Ru Thin Films Prepared by Metallorganic Chemical Vapor Deposition
Sub Title (in English)
Keyword(1) Ru thin film
Keyword(2) High Dielectric thin films
Keyword(3) MOCVD
Keyword(4) DRAM capacitor
1st Author's Name Sang Yeol Kang
1st Author's Affiliation School of Materials Science and Engineering, Seoul National University()
2nd Author's Name Kook Hyun Choi
2nd Author's Affiliation School of Materials Science and Engineering, Seoul National University
3rd Author's Name Seok Kiu Lee
3rd Author's Affiliation School of Materials Science and Engineering, Seoul National University
4th Author's Name Cheol Seong Hwang
4th Author's Affiliation School of Materials Science and Engineering, Seoul National University
5th Author's Name Hyeong Joon Kim
5th Author's Affiliation School of Materials Science and Engineering, Seoul National University
Date 1999/7/23
Paper # SDM99-109
Volume (vol) vol.99
Number (no) 232
Page pp.pp.-
#Pages 6
Date of Issue