| Presentation | 1999/7/23 GaAs RF IC with On-Chip High-k Capacitor Daisuke Ueda, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Monolithic integration of high-k capacitors in GaAs RF IC is reviewed. The implemented GaAs RF IC with on-chip high-k capacitor can be packaged in the compact outline with reduced pin counts. These RF IC provides the higher gain performance as well as the lower power dissipation compared to IC without them. The technology is well suited for the mobile communication terminals where lowering the power dissipation and reducing the package size is the key for success. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | BST / STO / MMIC / GaAs / Front-end / RF |
| Paper # | SDM99-107 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1999/7/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | GaAs RF IC with On-Chip High-k Capacitor |
| Sub Title (in English) | |
| Keyword(1) | BST |
| Keyword(2) | STO |
| Keyword(3) | MMIC |
| Keyword(4) | GaAs |
| Keyword(5) | Front-end |
| Keyword(6) | RF |
| 1st Author's Name | Daisuke Ueda |
| 1st Author's Affiliation | Compound Semiconductor Research Department Semiconductor Device Research Center, Panasonic() |
| Date | 1999/7/23 |
| Paper # | SDM99-107 |
| Volume (vol) | vol.99 |
| Number (no) | 232 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |