Presentation	1999/5/21 [Invited Paper] Microwave Power AlGaN/GaN HJFETs K. Kunihiro, K. Kasahara, Y. Takahashi, Y. Ohno,
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Abstract(in English)	Microwave performance of AlGaN/GaN HJFETs grown by MOVPE on sapphire substrate is reported. The 0.25-μm T-shaped gate is fabricated by two-layer resist process uding electron-beam lithography. The fabricated devices have an intrinsic cut-off frequency f_T of 58 GHz and an intrinsic maximum oscillation frequency f_ of 130 GHz. The ionization coefficients of GaN were extracted from the gate current of HJFETs. It is experimentally confirmed that the breakdown field in GaN is higher than that of GaAs by about a factor of eight. While these characteristics are very promising for microwave high-power applications, significant current collapse was observed in I-V Characteristics. The quality of epitaxial layer and surface will be a key issue for the final goal.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	Nitride semiconductors / Heterojunction / Power FET / Microwave / Electron-beam / Impact ionization
Paper #	SDM99-20
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Conference Information
Committee	SDM
Conference Date	1999/5/21(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	JPN
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	[Invited Paper] Microwave Power AlGaN/GaN HJFETs
Sub Title (in English)
Keyword(1)	Nitride semiconductors
Keyword(2)	Heterojunction
Keyword(3)	Power FET
Keyword(4)	Microwave
Keyword(5)	Electron-beam
Keyword(6)	Impact ionization
1st Author's Name	K. Kunihiro
1st Author's Affiliation	Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation()
2nd Author's Name	K. Kasahara
2nd Author's Affiliation	Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
3rd Author's Name	Y. Takahashi
3rd Author's Affiliation	Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
4th Author's Name	Y. Ohno
4th Author's Affiliation	Optoelectronics and High Frequency Device Research Laboratories, NEC Corporation
Date	1999/5/21
Paper #	SDM99-20
Volume (vol)	vol.99
Number (no)	68
Page	pp.pp.-
#Pages	6
Date of Issue