| Presentation | 1999/5/21 Maskless selective growth of GaN using low energy Ga-FIB and DMHy D. H. Cho, M. Tanaka, K. Pak, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Gallium nitride (GaN) is regarded as a promising material for near-ultraviolet optoelectronic devices since it has a large direct bandgap, 3.4 eV. We studied maskless selective growth of GaN on GaAs (100) substrate using Ga low energy focused ion beam (Ga-LEFIB) and dimethylhydrazine (DMHy) [(CH_3)_2N_2H_2] as Ga and N source, respectively. Ga-LEFIB with incident energy of 30 eV and DMHy were supplied simultaneously and GaN films were grown. In this experiment, We have found that under DMHy pressure of 6.0 x 10^<-6> Torr, a relatively pure GaN was formed when the substrate temperature was ~610 ℃. At relatively high substrate temperature (~650 ℃), nitridation of the growth films was significantly suppressed by N reevaporation and As incorporation from the GaAs substrate. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / Maskless selective growth / LEFIB / DMHy |
| Paper # | SDM99-17 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 1999/5/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Maskless selective growth of GaN using low energy Ga-FIB and DMHy |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | Maskless selective growth |
| Keyword(3) | LEFIB |
| Keyword(4) | DMHy |
| 1st Author's Name | D. H. Cho |
| 1st Author's Affiliation | Department of Electric and Electronic Engineering Toyohashi University of Technology() |
| 2nd Author's Name | M. Tanaka |
| 2nd Author's Affiliation | Department of Electric and Electronic Engineering Toyohashi University of Technology |
| 3rd Author's Name | K. Pak |
| 3rd Author's Affiliation | Department of Electric and Electronic Engineering Toyohashi University of Technology |
| Date | 1999/5/21 |
| Paper # | SDM99-17 |
| Volume (vol) | vol.99 |
| Number (no) | 68 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |