| Presentation | 1994/11/25 Study of trapped charge distribution in MOS structure SiO_2 film with photo I-V method Shin-ya Iwasaki, Takeshi Kanashima, Masanori Okuyama, Yoshihiro Hamakawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Energy distribution and depth profile of charged trap in MOS structure SiO_2 thin film have been characterized by photo I-V method.Charged traps exist much more in metal gate-SiO_2 interface region than Si-SiO_2 interface.Positively charged traps exist in shallow energy levels in SiO_2 and negatively charged traps exist in deep energy levels.The depth profile of charged traps near Si- SiO_2 interface region shows that polarity of the charge changes at about 60Å from interface with the metal,and positive one are ex tinguished by low temperature annealing.The effect of trapped charge on the optical barrier height has been measured. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiO_2 / Charged trap / Photo I-V method / Energy distribution / Depth profile |
| Paper # | SDM94-151 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1994/11/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Study of trapped charge distribution in MOS structure SiO_2 film with photo I-V method |
| Sub Title (in English) | |
| Keyword(1) | SiO_2 |
| Keyword(2) | Charged trap |
| Keyword(3) | Photo I-V method |
| Keyword(4) | Energy distribution |
| Keyword(5) | Depth profile |
| 1st Author's Name | Shin-ya Iwasaki |
| 1st Author's Affiliation | Department of Electrical Engineering,Faculty of Electrical Engineering Science,Osaka University() |
| 2nd Author's Name | Takeshi Kanashima |
| 2nd Author's Affiliation | Department of Electrical Engineering,Faculty of Electrical Engineering Science,Osaka University |
| 3rd Author's Name | Masanori Okuyama |
| 3rd Author's Affiliation | Department of Electrical Engineering,Faculty of Electrical Engineering Science,Osaka University |
| 4th Author's Name | Yoshihiro Hamakawa |
| 4th Author's Affiliation | Department of Electrical Engineering,Faculty of Electrical Engineering Science,Osaka University |
| Date | 1994/11/25 |
| Paper # | SDM94-151 |
| Volume (vol) | vol.94 |
| Number (no) | 367 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |