| Presentation | 1994/11/25 A study of film structure in PECVD SiOF Takashi Usami, Kimiaki Shimokawa, Masaki Yoshimaru, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Water absorption and desorption processes in PECVD fluorine- doped silicon oxide(SiOF) were studied using FT-IR and TDS.In SiOF film,Si-OH bonds and hydrofluoric acid were formed by hydrolysis reaction between Si-F bonds and absorbed water.The film natural structure and essential dielectric constant of SiOF films were also studied using P-SiN capped samples in order to get rid of effects of water absorption.It was clarified that Si-OH bonds are not existed in as deposited SiOF film and Si-F bonds has unknown some states.And essential dielectric constant of SiOF film contained 14 at.% fluorine was 2.8.This low dielectric constant was achevied by keeping off water absorption and hydrolysis reaction. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | fluorine-doped silicon oxide / water absorption / film structure / low dielectric constant |
| Paper # | SDM94-146 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1994/11/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | A study of film structure in PECVD SiOF |
| Sub Title (in English) | |
| Keyword(1) | fluorine-doped silicon oxide |
| Keyword(2) | water absorption |
| Keyword(3) | film structure |
| Keyword(4) | low dielectric constant |
| 1st Author's Name | Takashi Usami |
| 1st Author's Affiliation | VLSI R&D Center,Oki electric Industry Co,Ltd.,() |
| 2nd Author's Name | Kimiaki Shimokawa |
| 2nd Author's Affiliation | VLSI R&D Center,Oki electric Industry Co,Ltd., |
| 3rd Author's Name | Masaki Yoshimaru |
| 3rd Author's Affiliation | VLSI R&D Center,Oki electric Industry Co,Ltd. |
| Date | 1994/11/25 |
| Paper # | SDM94-146 |
| Volume (vol) | vol.94 |
| Number (no) | 367 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |