| Presentation | 1994/11/25 Fabrication and Electrical Properties of Yttrium Silicide/Silicon Yukinobu Tanida, Reiji Hatori, Junji Shirafuji, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Yttrium silicides have been fabricated both on Si(111)and on a- Si by the vacuum annealing.The relation of the annealing temperature with the silicide structure and with the electrical property is investigated.On Si(111),above the annealing temperature of 300℃,Yttrium disilicide(YSi_2-x>)grows and shows t he low Schottky barrier height with n-type silicon.However,above 400℃,the oxidization of silicide progresses and courses the increa se of barrier height and the reduction of the on-current.In the case of a-Si,the silicide grows above the 300℃,the junction anneal ed at 400℃ shows the best ohmic propertiy. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Yttrium / Silicide / Schottky barrier / amorphous silicon / ohmic contact |
| Paper # | SDM94-144 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1994/11/25(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication and Electrical Properties of Yttrium Silicide/Silicon |
| Sub Title (in English) | |
| Keyword(1) | Yttrium |
| Keyword(2) | Silicide |
| Keyword(3) | Schottky barrier |
| Keyword(4) | amorphous silicon |
| Keyword(5) | ohmic contact |
| 1st Author's Name | Yukinobu Tanida |
| 1st Author's Affiliation | Department of Electrical Engineering,Faculty of Engineering,Osaka University() |
| 2nd Author's Name | Reiji Hatori |
| 2nd Author's Affiliation | Department of Electrical Engineering,Faculty of Engineering,Osaka University |
| 3rd Author's Name | Junji Shirafuji |
| 3rd Author's Affiliation | Department of Electrical Engineering,Faculty of Engineering,Osaka University |
| Date | 1994/11/25 |
| Paper # | SDM94-144 |
| Volume (vol) | vol.94 |
| Number (no) | 367 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |