| Presentation | 1994/11/24 Evaluation of characteristics of Rapidly Thermal Processed SOI wafer and PIN photodiodes. Katsuhiro Fujiyoshi, Hideaki Yoshida, Yoshimaro Fujii, Tatsumi Yamanaka, Akira Usami, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We studied the effect of rapidly thermal annealing (RTA) on Silicon-on-insulator (SOI) wafers.Traps in the bonded SOI layer with different thickness were investigated with deep level transient spectroscopy (DLTS) method.A trap with a deep level (about Ec-Et=0.55eV) was observed.In the SOI layer with a thickness of 100μm,the magnitude of the DLTS signal decreased afte r RTA.Reverse current-voltage characteristics of PIN photodiodes on SOI layer were measured.The dark current decreased after RTA for PIN photodiodes on SOI layer with a thickness of 100μm.It is c onsidered that the trap in the SOI layer affects the dark current characteristics. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | bonded SOI wafer / DLTS method / RTA / PIN photodiodes / trap |
| Paper # | SDM94-138 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1994/11/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Evaluation of characteristics of Rapidly Thermal Processed SOI wafer and PIN photodiodes. |
| Sub Title (in English) | |
| Keyword(1) | bonded SOI wafer |
| Keyword(2) | DLTS method |
| Keyword(3) | RTA |
| Keyword(4) | PIN photodiodes |
| Keyword(5) | trap |
| 1st Author's Name | Katsuhiro Fujiyoshi |
| 1st Author's Affiliation | Department of Electrical and Computer Engineering,Nagoya Institute of Technology() |
| 2nd Author's Name | Hideaki Yoshida |
| 2nd Author's Affiliation | Department of Electrical and Computer Engineering,Nagoya Institute of Technology |
| 3rd Author's Name | Yoshimaro Fujii |
| 3rd Author's Affiliation | Hamamatsu Photonics |
| 4th Author's Name | Tatsumi Yamanaka |
| 4th Author's Affiliation | Hamamatsu Photonics |
| 5th Author's Name | Akira Usami |
| 5th Author's Affiliation | Department of Electrical and Computer Engineering,Nagoya Institute of Technology |
| Date | 1994/11/24 |
| Paper # | SDM94-138 |
| Volume (vol) | vol.94 |
| Number (no) | 366 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |