| Presentation | 1994/11/24 Precise SIMS Analysis of Shallow Doping Profiles Based on the Internal Standard Method Guo-Lin Liu, Izumi Aikawa, Hidetsugu Uchida, Shigeki Kuroda, Norio Hirashita, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Precise quantitative method to evaluate shallow doping profiles in Si has been investigated by secondary ion mass spectrometry(SIMS) with the internal standard method. SIMSmeasurements with the internal standard,formed by Poly-Si deposition and following ion implantation on samples to be measured,exhibit a good reproducibility of doping profiles in the sample.The reproducibility is found to be better than 5% in relative standard deviation between 17measurements.Quantitative evaluation,using chemical analysis,of the internal standard implantation dosage is also found to be effective to provide accurate quantitative SIMS profiling.This work demonstrates a successful improvement of quantitative SIMS analysis of shallow doping profiles in Si. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SIMS / doping profiles / internal standard method / quantitative analysis |
| Paper # | SDM94-136 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1994/11/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Precise SIMS Analysis of Shallow Doping Profiles Based on the Internal Standard Method |
| Sub Title (in English) | |
| Keyword(1) | SIMS |
| Keyword(2) | doping profiles |
| Keyword(3) | internal standard method |
| Keyword(4) | quantitative analysis |
| 1st Author's Name | Guo-Lin Liu |
| 1st Author's Affiliation | VLSI R&D Center,Oki Electric Industry Co.,Ltd.() |
| 2nd Author's Name | Izumi Aikawa |
| 2nd Author's Affiliation | VLSI R&D Center,Oki Electric Industry Co.,Ltd. |
| 3rd Author's Name | Hidetsugu Uchida |
| 3rd Author's Affiliation | VLSI R&D Center,Oki Electric Industry Co.,Ltd. |
| 4th Author's Name | Shigeki Kuroda |
| 4th Author's Affiliation | VLSI R&D Center,Oki Electric Industry Co.,Ltd. |
| 5th Author's Name | Norio Hirashita |
| 5th Author's Affiliation | VLSI R&D Center,Oki Electric Industry Co.,Ltd. |
| Date | 1994/11/24 |
| Paper # | SDM94-136 |
| Volume (vol) | vol.94 |
| Number (no) | 366 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |