Presentation 1994/11/24
Evaluation of a bonding interface on a direct bonded wafer with contactless LBIC method
Yuji Yamaguchi, Shun-ichiro Ishigami, Akira Usami, Kazunori Matsuki, Tsutomu Takeuchi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We evaluated a direct bonded wafer by a contactless laser beam induced current, conductivity(LBIC)method.Using the focused laser beam,many regions in which LBIC signal intensity and lifetime were degraded were observed.These regions are about 1mm in diameter. Some defects that act as a recombination center will exist in these regions.The variations in LBIC signalintensity were more significant than that in primary mode lifetime.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) direct bonded wafer / lifetime / contactless LBIC method / defect region
Paper # SDM94-131
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Conference Information
Committee SDM
Conference Date 1994/11/24(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Evaluation of a bonding interface on a direct bonded wafer with contactless LBIC method
Sub Title (in English)
Keyword(1) direct bonded wafer
Keyword(2) lifetime
Keyword(3) contactless LBIC method
Keyword(4) defect region
1st Author's Name Yuji Yamaguchi
1st Author's Affiliation Department of Electrical and Computer Engineering,Nagoya Institute of Technology()
2nd Author's Name Shun-ichiro Ishigami
2nd Author's Affiliation Mitsubishi Materials
3rd Author's Name Akira Usami
3rd Author's Affiliation Mitsubishi Materials
4th Author's Name Kazunori Matsuki
4th Author's Affiliation Dainippon Screen Manufacturing.
5th Author's Name Tsutomu Takeuchi
5th Author's Affiliation Dainippon Screen Manufacturing.
Date 1994/11/24
Paper # SDM94-131
Volume (vol) vol.94
Number (no) 366
Page pp.pp.-
#Pages 6
Date of Issue