Presentation 1994/5/27
High density 64Mb Mask ROM
Junichi Tanimoto, Toshiji Ishii, Kazunori Nakahara, Mikrou Okada, Hiroshi Tsugita, Kenji Sano,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) We have developed a very high density 64Mb Mask ROM which achieves a typical access time of 100ns. The Mask ROM is fabricated using 0.6μ CMOS technology and utiliz es many high speed techniques. These include a timing signal generator circuit which minimizes variation in pulse width despite changes in process parameters and ambient temperature,a fully differential sense amplifier,a new output butter control circuit which includes a supply voltage detection circuit,etc.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) 64Mb / Mask ROM / Timing signal / Differential sense amplifier
Paper # SDM94-33,ICD94-44
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Conference Information
Committee SDM
Conference Date 1994/5/27(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High density 64Mb Mask ROM
Sub Title (in English)
Keyword(1) 64Mb
Keyword(2) Mask ROM
Keyword(3) Timing signal
Keyword(4) Differential sense amplifier
1st Author's Name Junichi Tanimoto
1st Author's Affiliation SHARP IC group()
2nd Author's Name Toshiji Ishii
2nd Author's Affiliation SHARP IC group
3rd Author's Name Kazunori Nakahara
3rd Author's Affiliation SHARP IC group
4th Author's Name Mikrou Okada
4th Author's Affiliation SHARP IC group
5th Author's Name Hiroshi Tsugita
5th Author's Affiliation SHARP IC group
6th Author's Name Kenji Sano
6th Author's Affiliation SHARP IC group
Date 1994/5/27
Paper # SDM94-33,ICD94-44
Volume (vol) vol.94
Number (no) 73
Page pp.pp.-
#Pages 6
Date of Issue