| Presentation | 1994/5/27 256Kb Ferroelectric nonvolatile memory technology for IT/IC cell with 100ns read/write time at 3V George Nakane, Tatsumi Sumi, Nobuyuki Moriwaki, Tetsuji Nakakuma, Yuji Judai, Yasuhiro Uemoto, Yoshihisa Nagano, Shinichirou Hayashi, Masamichi Azuma, Eiji Fujii, Shinichi Katsu, Tatsuro Otsuki, Larry McMillan, Calros Araujo, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A 256Kb nonvolatile memory has been developed that produced a 3V- operation,100ns read, write time,3mA-operation and read/write cycles more than 10,000 times greater than conventional memories(more than 10^12> cycles).This development was achieved through the following new technologies: (1)Newly developed ferroelectric material that does not deteriorate through,read, write cycles.(2)A one-transistor and one- capacitor-per-bit(1T1C)cell that makes possible low voltage operation and high integration.(3)Circuitry for low-power operation. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Ferroelectric / Nonvoltile memory / 256Kb ReRAM / read/rite cycles / Low Voltage operation |
| Paper # | SDM94-31,ICD94-42 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1994/5/27(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | 256Kb Ferroelectric nonvolatile memory technology for IT/IC cell with 100ns read/write time at 3V |
| Sub Title (in English) | |
| Keyword(1) | Ferroelectric |
| Keyword(2) | Nonvoltile memory |
| Keyword(3) | 256Kb ReRAM |
| Keyword(4) | read/rite cycles |
| Keyword(5) | Low Voltage operation |
| 1st Author's Name | George Nakane |
| 1st Author's Affiliation | Matsushita Electronics Corporation() |
| 2nd Author's Name | Tatsumi Sumi |
| 2nd Author's Affiliation | Matsushita Electronics Corporation |
| 3rd Author's Name | Nobuyuki Moriwaki |
| 3rd Author's Affiliation | Matsushita Electronics Corporation |
| 4th Author's Name | Tetsuji Nakakuma |
| 4th Author's Affiliation | Matsushita Electronics Corporation |
| 5th Author's Name | Yuji Judai |
| 5th Author's Affiliation | Matsushita Electronics Corporation |
| 6th Author's Name | Yasuhiro Uemoto |
| 6th Author's Affiliation | Matsushita Electronics Corporation |
| 7th Author's Name | Yoshihisa Nagano |
| 7th Author's Affiliation | Matsushita Electronics Corporation |
| 8th Author's Name | Shinichirou Hayashi |
| 8th Author's Affiliation | Matsushita Electronics Corporation |
| 9th Author's Name | Masamichi Azuma |
| 9th Author's Affiliation | Matsushita Electronics Corporation |
| 10th Author's Name | Eiji Fujii |
| 10th Author's Affiliation | Matsushita Electronics Corporation |
| 11th Author's Name | Shinichi Katsu |
| 11th Author's Affiliation | Matsushita Electronics Corporation |
| 12th Author's Name | Tatsuro Otsuki |
| 12th Author's Affiliation | Matsushita Electronics Corporation |
| 13th Author's Name | Larry McMillan |
| 13th Author's Affiliation | Symetrix Corporation |
| 14th Author's Name | Calros Araujo |
| 14th Author's Affiliation | Symetrix Corporation |
| Date | 1994/5/27 |
| Paper # | SDM94-31,ICD94-42 |
| Volume (vol) | vol.94 |
| Number (no) | 73 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |