Presentation 1994/5/27
256Mbit DRAM with Boosted Sense Ground
Shigeki Tomishima, Mikio Asakura, Masaki Tsukude, Takahiro Tsuruda, Kazutami Arimoto, Kazuyasu Fujishima,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) This papaer discribes two circuit technologies for high density 256Mbit DRAM.The first technology is the Boosted Sense Ground(BSG) sheme in order to improve the characteristic of a data retention. With using this sheme,the sensing time is 1.2ns fater than the conventional sheme.And more the refresh period till the first fail- bit appears becomes 2 times longer than conventional sheme.Next, the second technology is the hierarchical bit-line architecture in order to reduse the number of the sense amplifier.Utilizing this technology,we could realize 256Mbit DRAM with a small chip size 304mm^2.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) DRAM / Boosted Sense Ground / Hierarchical Bit-line
Paper # SDM94-24,ICD94-35
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Conference Information
Committee SDM
Conference Date 1994/5/27(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 256Mbit DRAM with Boosted Sense Ground
Sub Title (in English)
Keyword(1) DRAM
Keyword(2) Boosted Sense Ground
Keyword(3) Hierarchical Bit-line
1st Author's Name Shigeki Tomishima
1st Author's Affiliation ULSI Laboratory,Mitsubishi Electric Corporation()
2nd Author's Name Mikio Asakura
2nd Author's Affiliation ULSI Laboratory,Mitsubishi Electric Corporation
3rd Author's Name Masaki Tsukude
3rd Author's Affiliation ULSI Laboratory,Mitsubishi Electric Corporation
4th Author's Name Takahiro Tsuruda
4th Author's Affiliation ULSI Laboratory,Mitsubishi Electric Corporation
5th Author's Name Kazutami Arimoto
5th Author's Affiliation ULSI Laboratory,Mitsubishi Electric Corporation
6th Author's Name Kazuyasu Fujishima
6th Author's Affiliation Kitaitami Works,Mitsubishi Electric Corporation
Date 1994/5/27
Paper # SDM94-24,ICD94-35
Volume (vol) vol.94
Number (no) 73
Page pp.pp.-
#Pages 8
Date of Issue