| Presentation | 1994/4/21 Initial Stage of Oxidation of Hydrogen-Terminated Si(111)through Preoxide Hiroaki Sekikawa, Kazuaki Ohishi, Hiroshi Nohira, Takeo Hatori, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Periodic changes in SiO_2, Si(111)interface structure with the progress of thermal oxidation of hydrogen-terminated Si(111) surface through preoxide were studied using X-ray photoelectron spectroscopy at temperatures above 600℃.Two kinds of preoxides wer e used in the present study.One was formed in 1 Torr dry oxygen at 300℃.Another was formed in the mixed solution of H_2SO_4 and H_2O_ 2 maintained at 85-90℃. As in the case of thermal oxide formed at 300℃ used as a preoxid e,layer by layer growth of thermal oxide at 600℃ and 800℃ were ob served in the case of native oxide used as a preoxide.Effects of native oxide on the structure of oxide and interface structures are also discussed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | thermal oxidation / Initial stage of oxidation / Cayer-by-layer oxidation / SiO_2/i interface |
| Paper # | SDM94-2 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1994/4/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Initial Stage of Oxidation of Hydrogen-Terminated Si(111)through Preoxide |
| Sub Title (in English) | |
| Keyword(1) | thermal oxidation |
| Keyword(2) | Initial stage of oxidation |
| Keyword(3) | Cayer-by-layer oxidation |
| Keyword(4) | SiO_2/i interface |
| 1st Author's Name | Hiroaki Sekikawa |
| 1st Author's Affiliation | Musashi Institute of Technology() |
| 2nd Author's Name | Kazuaki Ohishi |
| 2nd Author's Affiliation | Musashi Institute of Technology |
| 3rd Author's Name | Hiroshi Nohira |
| 3rd Author's Affiliation | Musashi Institute of Technology |
| 4th Author's Name | Takeo Hatori |
| 4th Author's Affiliation | Musashi Institute of Technology |
| Date | 1994/4/21 |
| Paper # | SDM94-2 |
| Volume (vol) | vol.94 |
| Number (no) | 11 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |