| Presentation | 1994/10/20 Low-temperature growth of Si thin films by remote plasma-enhanced CVD Kazutoshi Utsumi, Ashtosh Ganjoo, Akira Yoshida, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Low-temperature Si epitaxial growth is extremely important for next-generation Si ultra large scale integration(Si-ULSI)and ultra high speed devices.The remote plasma-enhanced chemical vapor deposition(RPECVD)process increases the adatom mobility on the surface of the substrate and decreases the plasma damage.In this study,we have deposited Si thin films by RPECVD with the use of 100%Si_2H_6.The crystallinity and morphology of the Si film were characterized by reflection high energy electron diffraction(RHEED),Nomarski type optical microscopy and scanning electron microscopy(SEM).Single crystalline films of Si have been obtained at 300℃. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | remote plasma-enhanced CVD / 100%Si_2H_6 / 300℃ / single crysta lline of Si film |
| Paper # | SDM94-113 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1994/10/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-temperature growth of Si thin films by remote plasma-enhanced CVD |
| Sub Title (in English) | |
| Keyword(1) | remote plasma-enhanced CVD |
| Keyword(2) | 100%Si_2H_6 |
| Keyword(3) | 300℃ |
| Keyword(4) | single crysta lline of Si film |
| 1st Author's Name | Kazutoshi Utsumi |
| 1st Author's Affiliation | Toyohashi University of Technology() |
| 2nd Author's Name | Ashtosh Ganjoo |
| 2nd Author's Affiliation | Toyohashi University of Technology |
| 3rd Author's Name | Akira Yoshida |
| 3rd Author's Affiliation | Toyohashi University of Technology |
| Date | 1994/10/20 |
| Paper # | SDM94-113 |
| Volume (vol) | vol.94 |
| Number (no) | 283 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |