Presentation | 1994/7/25 0.25μm Buried-Channel PMOSFET′s Using Channel Doping Through Amor phous Si Thin Film Hiroshi Ishida, Akihiro Shimizu, Nagatoshi Ohki, Toshiaki Yamanaka, Takahiro Nagano, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | A novel channel doping through an amorphous Si thin film to form a shallow buried-channel layer for 0.25μm pMOSFETs is investigated .Good controlability of threshold voltage,low threshold voltage roll-off,and improvement in the TDDB characteristics are obtained. This is because this process suppresses boron redistribution which occurs during gate oxidation in a conventional process. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | p^+ polysilicon gate / boron-doped polysilicon / nitrogen-doped polysilicon |
Paper # | SDM94-43 |
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Conference Information | |
Committee | SDM |
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Conference Date | 1994/7/25(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | 0.25μm Buried-Channel PMOSFET′s Using Channel Doping Through Amor phous Si Thin Film |
Sub Title (in English) | |
Keyword(1) | p^+ polysilicon gate |
Keyword(2) | boron-doped polysilicon |
Keyword(3) | nitrogen-doped polysilicon |
1st Author's Name | Hiroshi Ishida |
1st Author's Affiliation | Hitachi ULSI Engineering Corporation() |
2nd Author's Name | Akihiro Shimizu |
2nd Author's Affiliation | Hitachi ULSI Engineering Corporation |
3rd Author's Name | Nagatoshi Ohki |
3rd Author's Affiliation | Hitachi ULSI Engineering Corporation |
4th Author's Name | Toshiaki Yamanaka |
4th Author's Affiliation | Central Research Laboratory Hitachi Ltd. |
5th Author's Name | Takahiro Nagano |
5th Author's Affiliation | Central Research Laboratory Hitachi Ltd. |
Date | 1994/7/25 |
Paper # | SDM94-43 |
Volume (vol) | vol.94 |
Number (no) | 180 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |