Presentation 1994/7/25
0.25μm Buried-Channel PMOSFET′s Using Channel Doping Through Amor phous Si Thin Film
Hiroshi Ishida, Akihiro Shimizu, Nagatoshi Ohki, Toshiaki Yamanaka, Takahiro Nagano,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A novel channel doping through an amorphous Si thin film to form a shallow buried-channel layer for 0.25μm pMOSFETs is investigated .Good controlability of threshold voltage,low threshold voltage roll-off,and improvement in the TDDB characteristics are obtained. This is because this process suppresses boron redistribution which occurs during gate oxidation in a conventional process.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) p^+ polysilicon gate / boron-doped polysilicon / nitrogen-doped polysilicon
Paper # SDM94-43
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Conference Information
Committee SDM
Conference Date 1994/7/25(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 0.25μm Buried-Channel PMOSFET′s Using Channel Doping Through Amor phous Si Thin Film
Sub Title (in English)
Keyword(1) p^+ polysilicon gate
Keyword(2) boron-doped polysilicon
Keyword(3) nitrogen-doped polysilicon
1st Author's Name Hiroshi Ishida
1st Author's Affiliation Hitachi ULSI Engineering Corporation()
2nd Author's Name Akihiro Shimizu
2nd Author's Affiliation Hitachi ULSI Engineering Corporation
3rd Author's Name Nagatoshi Ohki
3rd Author's Affiliation Hitachi ULSI Engineering Corporation
4th Author's Name Toshiaki Yamanaka
4th Author's Affiliation Central Research Laboratory Hitachi Ltd.
5th Author's Name Takahiro Nagano
5th Author's Affiliation Central Research Laboratory Hitachi Ltd.
Date 1994/7/25
Paper # SDM94-43
Volume (vol) vol.94
Number (no) 180
Page pp.pp.-
#Pages 6
Date of Issue