Presentation | 1994/7/25 Area and thickness dependence of the TDDB characteristics of silicon dioxides Akinobu Teramoto, Kiyoteru Kobayashi, Makoto Hirayama, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | We have studied the area dependence of the TDDB characteristics of 6.8- and 8.7-nm oxides.the time-to-breakdown(T_BD>)and the charge-to-breakdown(Q_BD>)in the intrinsic breakdown region decrease with the increase in MOS capasitor area.This phenomenon can be explained by introducing a localized weak oxide area model. The localized weak oxide areas are distributed uniformly throughout the MOS capasitor areas.And the localized weak oxide area density increases with the increase in the stress time. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | thermal oxide / time dependent dielectric breakdown / area dependence / thickness dependence |
Paper # | SDM94-38 |
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Committee | SDM |
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Conference Date | 1994/7/25(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Area and thickness dependence of the TDDB characteristics of silicon dioxides |
Sub Title (in English) | |
Keyword(1) | thermal oxide |
Keyword(2) | time dependent dielectric breakdown |
Keyword(3) | area dependence |
Keyword(4) | thickness dependence |
1st Author's Name | Akinobu Teramoto |
1st Author's Affiliation | ULSI Laboratory,Mitsubishi Electric Corporation() |
2nd Author's Name | Kiyoteru Kobayashi |
2nd Author's Affiliation | ULSI Laboratory,Mitsubishi Electric Corporation |
3rd Author's Name | Makoto Hirayama |
3rd Author's Affiliation | ULSI Laboratory,Mitsubishi Electric Corporation |
Date | 1994/7/25 |
Paper # | SDM94-38 |
Volume (vol) | vol.94 |
Number (no) | 180 |
Page | pp.pp.- |
#Pages | 6 |
Date of Issue |