Presentation 1994/7/25
Area and thickness dependence of the TDDB characteristics of silicon dioxides
Akinobu Teramoto, Kiyoteru Kobayashi, Makoto Hirayama,
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Abstract(in English) We have studied the area dependence of the TDDB characteristics of 6.8- and 8.7-nm oxides.the time-to-breakdown(T_BD>)and the charge-to-breakdown(Q_BD>)in the intrinsic breakdown region decrease with the increase in MOS capasitor area.This phenomenon can be explained by introducing a localized weak oxide area model. The localized weak oxide areas are distributed uniformly throughout the MOS capasitor areas.And the localized weak oxide area density increases with the increase in the stress time.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) thermal oxide / time dependent dielectric breakdown / area dependence / thickness dependence
Paper # SDM94-38
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Conference Information
Committee SDM
Conference Date 1994/7/25(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Area and thickness dependence of the TDDB characteristics of silicon dioxides
Sub Title (in English)
Keyword(1) thermal oxide
Keyword(2) time dependent dielectric breakdown
Keyword(3) area dependence
Keyword(4) thickness dependence
1st Author's Name Akinobu Teramoto
1st Author's Affiliation ULSI Laboratory,Mitsubishi Electric Corporation()
2nd Author's Name Kiyoteru Kobayashi
2nd Author's Affiliation ULSI Laboratory,Mitsubishi Electric Corporation
3rd Author's Name Makoto Hirayama
3rd Author's Affiliation ULSI Laboratory,Mitsubishi Electric Corporation
Date 1994/7/25
Paper # SDM94-38
Volume (vol) vol.94
Number (no) 180
Page pp.pp.-
#Pages 6
Date of Issue