| Presentation | 1999/3/10 Effect of tantalum reactions with gate oxide on performance and reliability of tantalumgate MOS devices Kunihiro Kawai, Takeo Ushiki, Ichiro 0hshima, Tadahiro Ohmi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The reactions between thin tantalum (Ta) gate films and gate oxide (SiO_2) in Ta-gate MOS process have been experimentally investigated for the first time. Gate-Ta reactions with gate oxide induce a little reduction of gate oxide thickness, resulting in higher current drive of MOSFET. Moreover, the interlayer improve the thermal stability on gate oxide. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Tantalum gate / Adhesion / Low-temperature-process |
| Paper # | SDM98-222 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1999/3/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Effect of tantalum reactions with gate oxide on performance and reliability of tantalumgate MOS devices |
| Sub Title (in English) | |
| Keyword(1) | Tantalum gate |
| Keyword(2) | Adhesion |
| Keyword(3) | Low-temperature-process |
| 1st Author's Name | Kunihiro Kawai |
| 1st Author's Affiliation | Department of Electronic Engineering,Graduate School of Engineering,Tohoku University : Laboratory for Electronic Intelligent Systems,Research Institute of Electrical Communication,Tohoku University() |
| 2nd Author's Name | Takeo Ushiki |
| 2nd Author's Affiliation | Department of Electronic Engineering,Graduate School of Engineering,Tohoku University : Laboratory for Electronic Intelligent Systems,Research Institute of Electrical Communication,Tohoku University |
| 3rd Author's Name | Ichiro 0hshima |
| 3rd Author's Affiliation | Department of Electronic Engineering,Graduate School of Engineering,Tohoku University : Laboratory for Electronic Intelligent Systems,Research Institute of Electrical Communication,Tohoku University |
| 4th Author's Name | Tadahiro Ohmi |
| 4th Author's Affiliation | New Industry Creation Hatchery Center,Tohoku University |
| Date | 1999/3/10 |
| Paper # | SDM98-222 |
| Volume (vol) | vol.98 |
| Number (no) | 652 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |