| Presentation | 1999/3/10 Insulator thickness dependence on total dose effect of MNOS structure T. Fujimaki, K. Ohnishi, Y. Takahashi, M. Yoshikawa, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The total-dose effect of MNOS structure has been investigated. The charge trapping mechanisms in the insulators irradiated by ^<60>Co gamma ray were estimated by analyzing mesured radiation induced mid-gap Voltage shift using proposed charge trapping model. In this model, it is assumed the charge trap centers are licated at Si-oxjde and oxide-nitride interfaces, respectively, The mid-gap voltage shifts were also calculated using the model, and it was expected that the radiation hardened device can be obtainedu sing MNOS structure which has specific oxide and nitride thickness in terms of radiation-induced trapped charge. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | radiatoin hardness / MNOS structure / charge trapping mechanism / Mid-gap voltage |
| Paper # | SDM98-220 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1999/3/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Insulator thickness dependence on total dose effect of MNOS structure |
| Sub Title (in English) | |
| Keyword(1) | radiatoin hardness |
| Keyword(2) | MNOS structure |
| Keyword(3) | charge trapping mechanism |
| Keyword(4) | Mid-gap voltage |
| 1st Author's Name | T. Fujimaki |
| 1st Author's Affiliation | College of Science and Technology() |
| 2nd Author's Name | K. Ohnishi |
| 2nd Author's Affiliation | College of Science and Technology |
| 3rd Author's Name | Y. Takahashi |
| 3rd Author's Affiliation | College of Science and Technology |
| 4th Author's Name | M. Yoshikawa |
| 4th Author's Affiliation | Japan Atomic Energy Research Institute (JAERI) Nihon University |
| Date | 1999/3/10 |
| Paper # | SDM98-220 |
| Volume (vol) | vol.98 |
| Number (no) | 652 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |