| Presentation | 1999/3/10 Gate Oxide Degradation by Charging Damage During the Contact etching Tetsuya OHNISHI, Yoshinori HIGAMI, Atsushi KAGISAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In SOI structure, the buried oxide (BOX) receives charging damage during the contact etching. The damage is increased with decreasing hole size, the buried oxide is destroyed. The evaluation of gate oxide with an antenna MOS capacitor, when the buried oxide is not destroyed, the gate oxide on SOI substrates can be superior to the gate oxide on bulk substrates. When the buried oxide is destroyed by charging damage, the destruction destroys the gate oxide. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Contact etching / S0I / Charging Damage / Gate oxide / Buried 0xide (BOX) |
| Paper # | SDM98-218 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1999/3/10(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Gate Oxide Degradation by Charging Damage During the Contact etching |
| Sub Title (in English) | |
| Keyword(1) | Contact etching |
| Keyword(2) | S0I |
| Keyword(3) | Charging Damage |
| Keyword(4) | Gate oxide |
| Keyword(5) | Buried 0xide (BOX) |
| 1st Author's Name | Tetsuya OHNISHI |
| 1st Author's Affiliation | Process Development Center,IC Group,SHARP Corp.() |
| 2nd Author's Name | Yoshinori HIGAMI |
| 2nd Author's Affiliation | Process Development Center,IC Group,SHARP Corp. |
| 3rd Author's Name | Atsushi KAGISAWA |
| 3rd Author's Affiliation | Process Development Center,IC Group,SHARP Corp. |
| Date | 1999/3/10 |
| Paper # | SDM98-218 |
| Volume (vol) | vol.98 |
| Number (no) | 652 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |