Presentation 1998/10/22
A Statistical Gate CD Control including OPC
Akio Misaka, Akihiko Goda, shinji Odanaka,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A new statistical methodology including a pattern bias OPC is developed for controlling the gate CD variation at CMOS cell level. The gate CD variation at cell level in the KrF lithography is estimated by using the method. It is shown that the gate CD variation at cell level is significantly decreased by introducing both OPC and annular illumination with a halftone phase shift mask(PSM).
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Gate CD / Optical proximity correction / Resolution enhancement technology / CD variation
Paper # VLD98-77,ED98-102,SDM98-138,ICD98-208
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Conference Information
Committee SDM
Conference Date 1998/10/22(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A Statistical Gate CD Control including OPC
Sub Title (in English)
Keyword(1) Gate CD
Keyword(2) Optical proximity correction
Keyword(3) Resolution enhancement technology
Keyword(4) CD variation
1st Author's Name Akio Misaka
1st Author's Affiliation ULSI Process Technology Development Center, Matsushita Electronics Corporation()
2nd Author's Name Akihiko Goda
2nd Author's Affiliation ULSI Process Technology Development Center, Matsushita Electronics Corporation
3rd Author's Name shinji Odanaka
3rd Author's Affiliation ULSI Process Technology Development Center, Matsushita Electronics Corporation
Date 1998/10/22
Paper # VLD98-77,ED98-102,SDM98-138,ICD98-208
Volume (vol) vol.98
Number (no) 349
Page pp.pp.-
#Pages 8
Date of Issue