Presentation 1998/10/22
A New Method for Calculating One-dimensional Process Margin in Consideration of Process Variation
Tadashi Miwa, Tomonobu Noda, Tatuo Akiyama, Shigeki Sugimoto,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The yield and device characteristics in LSI have become more sensitive to their process variation, as the design rule is more shrinked and larger wafer is used. So the process variation such as between and within wafers should be taken account in process integration to eliminate yield loss. But actually it's difficult to make experiment which can cover possible variations all in process because of cost and time. That's why some calculation method have been required recently. In this paper, we report a new method for calculating one-dimensional(vertical direction such as etching and deposition)process margin in consideration of process variation using Monte Carlo simulation.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) process margin / process variation / Monte Carlo method / simulation
Paper # VLD98-74,ED98-99,SDM98-135,ICD98-205
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Committee SDM
Conference Date 1998/10/22(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) A New Method for Calculating One-dimensional Process Margin in Consideration of Process Variation
Sub Title (in English)
Keyword(1) process margin
Keyword(2) process variation
Keyword(3) Monte Carlo method
Keyword(4) simulation
1st Author's Name Tadashi Miwa
1st Author's Affiliation Semiconductor Manufacturing Engineering Center, Toshiba Corporation()
2nd Author's Name Tomonobu Noda
2nd Author's Affiliation Semiconductor Manufacturing Engineering Center, Toshiba Corporation
3rd Author's Name Tatuo Akiyama
3rd Author's Affiliation Semiconductor Manufacturing Engineering Center, Toshiba Corporation
4th Author's Name Shigeki Sugimoto
4th Author's Affiliation Semiconductor Manufacturing Engineering Center, Toshiba Corporation
Date 1998/10/22
Paper # VLD98-74,ED98-99,SDM98-135,ICD98-205
Volume (vol) vol.98
Number (no) 349
Page pp.pp.-
#Pages 8
Date of Issue