| Presentation | 1998/8/21 Miniaturized MOSFET with Fully-Self-Aligned Metallization for GHz-band Power Amplifier M Yokoyama, A. Morimoto, T. Saito, K. Masu, K. Tsubouchi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In sub-0.1-um MOSFETs, interconnect parasitics are drastically limitting the performance improvement. we have proposed the FSAM (Fully-Self-Alligned-Metallization) MOSFET using selective Al-CVD for reduction of the parasitic resistances. In this papaer, parasitic resistances in both FSAM and conventional SALICIDE devices are studied from the viewpoint of analog RF application. Simulation results show that FSAm devices are much effective in reduction of parasitic resistances for application to wide-gate GHz-band power amplifiers. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Miniaturized MOSFET / parasitic resistance / selective Al CVD / RF power amplifier |
| Paper # | SDM98-130 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/8/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Miniaturized MOSFET with Fully-Self-Aligned Metallization for GHz-band Power Amplifier |
| Sub Title (in English) | |
| Keyword(1) | Miniaturized MOSFET |
| Keyword(2) | parasitic resistance |
| Keyword(3) | selective Al CVD |
| Keyword(4) | RF power amplifier |
| 1st Author's Name | M Yokoyama |
| 1st Author's Affiliation | Research Institute of Electrical Communication, Tohoku University() |
| 2nd Author's Name | A. Morimoto |
| 2nd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 3rd Author's Name | T. Saito |
| 3rd Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 4th Author's Name | K. Masu |
| 4th Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| 5th Author's Name | K. Tsubouchi |
| 5th Author's Affiliation | Research Institute of Electrical Communication, Tohoku University |
| Date | 1998/8/21 |
| Paper # | SDM98-130 |
| Volume (vol) | vol.98 |
| Number (no) | 243 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |