| Presentation | 1998/8/20 Atomic-Layer Thermal Nitridation Process of Si (100) Using NH_3 Takeshi WATANABE, Masao SAKURABA, Takashi MATSUURA, Junichi MUROTA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Atomic-layer nitridation jof Si (100) in NH_3 has been investigated using an ultraclean low pressure cold-wall reactor system with flash heating in order to separate surface adsorption and reaction of HN_3. The N atom concentration (n_N) on Si (100) nitridized at 400℃ in NH_3 with flash heating by light irradiation of 60 J/cm^2 per shot initially increases with nitridation time (Xe flash light irradiation number) and tends to saturate to a certain value (～2.7×10^<15>cm^-2). The reaction efficiency of NH_3 drastically increases as compared to the thermal nitridation without flash heating. By separating adsorption and reaction of NH_3, it is expected that NH_3 physically adsorbs on Si (100) according to Langmuir-type adsorption and then reaction proceeds. It was found by XPS that flash heated nitridation proceeds in the backbond of the surface Si atoms as well as thermal nitridation at 650℃. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | atomic-layer / nitridation / Si / NH_3 / flash heating / Langmuir-type |
| Paper # | SDM98-121 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/8/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Atomic-Layer Thermal Nitridation Process of Si (100) Using NH_3 |
| Sub Title (in English) | |
| Keyword(1) | atomic-layer |
| Keyword(2) | nitridation |
| Keyword(3) | Si |
| Keyword(4) | NH_3 |
| Keyword(5) | flash heating |
| Keyword(6) | Langmuir-type |
| 1st Author's Name | Takeshi WATANABE |
| 1st Author's Affiliation | Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University() |
| 2nd Author's Name | Masao SAKURABA |
| 2nd Author's Affiliation | Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University |
| 3rd Author's Name | Takashi MATSUURA |
| 3rd Author's Affiliation | Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University |
| 4th Author's Name | Junichi MUROTA |
| 4th Author's Affiliation | Laboratory for Electronic Intelligent Systems, Research Institute of Electrical Communication, Tohoku University |
| Date | 1998/8/20 |
| Paper # | SDM98-121 |
| Volume (vol) | vol.98 |
| Number (no) | 242 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |