Presentation 1998/8/20
Interaction between NF_3 and Si substrate : A Density Functional Study
Akira Endou, Aruba Yamada, S.Salai C. Ammal, Momoji Kubo, Kazuo Teraishi, Akira Miyamoto, Masahiro Kitajima, Thomas W. Little, Fumio S. Ohuchi,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) As a first step to understand the etching process of the Si substrate by NF_3, we carried out density functional quantum chemical calculations to investigate the interaction between NF_3 molecule and the silicon surface. The adsorption states of NF_x (x=1, 2) species and F atom on Si surface and the incorporated states of F atom at the interstitial sites of silicon lattice were studied. As a result, it was found that F atom can not be incorporated at the interstitial sites in the ground state. From experimental data, it is suggested that the change on F atom is relatively close to the neutral state. Our result showed that the negative charge on F atom in Si-N-F moiety was considerable small, which may correspond to experimental findings.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Density functional quantum chemical calculation / Si etching process
Paper # SDM98-119
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Committee SDM
Conference Date 1998/8/20(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Interaction between NF_3 and Si substrate : A Density Functional Study
Sub Title (in English)
Keyword(1) Density functional quantum chemical calculation
Keyword(2) Si etching process
1st Author's Name Akira Endou
1st Author's Affiliation Graduate School of Engineering, Tohoku University()
2nd Author's Name Aruba Yamada
2nd Author's Affiliation Graduate School of Engineering, Tohoku University
3rd Author's Name S.Salai C. Ammal
3rd Author's Affiliation Graduate School of Engineering, Tohoku University
4th Author's Name Momoji Kubo
4th Author's Affiliation Graduate School of Engineering, Tohoku University
5th Author's Name Kazuo Teraishi
5th Author's Affiliation Graduate School of Engineering, Tohoku University
6th Author's Name Akira Miyamoto
6th Author's Affiliation Graduate School of Engineering, Tohoku University
7th Author's Name Masahiro Kitajima
7th Author's Affiliation National Research Institute for Metals
8th Author's Name Thomas W. Little
8th Author's Affiliation University of Washington
9th Author's Name Fumio S. Ohuchi
9th Author's Affiliation University of Washington
Date 1998/8/20
Paper # SDM98-119
Volume (vol) vol.98
Number (no) 242
Page pp.pp.-
#Pages 5
Date of Issue