Presentation | 1998/8/20 Interaction between NF_3 and Si substrate : A Density Functional Study Akira Endou, Aruba Yamada, S.Salai C. Ammal, Momoji Kubo, Kazuo Teraishi, Akira Miyamoto, Masahiro Kitajima, Thomas W. Little, Fumio S. Ohuchi, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | As a first step to understand the etching process of the Si substrate by NF_3, we carried out density functional quantum chemical calculations to investigate the interaction between NF_3 molecule and the silicon surface. The adsorption states of NF_x (x=1, 2) species and F atom on Si surface and the incorporated states of F atom at the interstitial sites of silicon lattice were studied. As a result, it was found that F atom can not be incorporated at the interstitial sites in the ground state. From experimental data, it is suggested that the change on F atom is relatively close to the neutral state. Our result showed that the negative charge on F atom in Si-N-F moiety was considerable small, which may correspond to experimental findings. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Density functional quantum chemical calculation / Si etching process |
Paper # | SDM98-119 |
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Committee | SDM |
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Conference Date | 1998/8/20(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Interaction between NF_3 and Si substrate : A Density Functional Study |
Sub Title (in English) | |
Keyword(1) | Density functional quantum chemical calculation |
Keyword(2) | Si etching process |
1st Author's Name | Akira Endou |
1st Author's Affiliation | Graduate School of Engineering, Tohoku University() |
2nd Author's Name | Aruba Yamada |
2nd Author's Affiliation | Graduate School of Engineering, Tohoku University |
3rd Author's Name | S.Salai C. Ammal |
3rd Author's Affiliation | Graduate School of Engineering, Tohoku University |
4th Author's Name | Momoji Kubo |
4th Author's Affiliation | Graduate School of Engineering, Tohoku University |
5th Author's Name | Kazuo Teraishi |
5th Author's Affiliation | Graduate School of Engineering, Tohoku University |
6th Author's Name | Akira Miyamoto |
6th Author's Affiliation | Graduate School of Engineering, Tohoku University |
7th Author's Name | Masahiro Kitajima |
7th Author's Affiliation | National Research Institute for Metals |
8th Author's Name | Thomas W. Little |
8th Author's Affiliation | University of Washington |
9th Author's Name | Fumio S. Ohuchi |
9th Author's Affiliation | University of Washington |
Date | 1998/8/20 |
Paper # | SDM98-119 |
Volume (vol) | vol.98 |
Number (no) | 242 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |