Presentation | 1998/8/20 Molecular Dynamics Study of Inert Gas Irradiation Process on SiO_2 Surface Ryuji Miura, Takayuki Onozu, S. Salai Cheettu Ammal, Momoji Kubo, Kazuo Teraishi, Akira Miyamoto, Yuji Saito, Ryu Kaihara, Katsuyuki Sekine, Masaki Hirayama, Tadahiro Ohmi, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Low-temperature Si oxidation is an important technology for the fabrication of the miniaturized semiconductor devices. Recently, inert gas ion irradiation process has attracted much attention as the solution for this subject. We have applied computational chemistry techniques, such as molecular dynamics (MD) and computer graphics (CG) to study the irradiation process of AR atom on amorphous-SiO_2 surface, and demonstrated the applicability of MD simulation and observed the activation process of amorphous-SiO_2 surface with Ar irradiation. We also observed that almost all the irradiation energy were conducted to the substrates after bombardment process. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Si Oxidation / Inert Gas Irradiation / Molecular Dynamics / Computer Graphics |
Paper # | SDM98-116 |
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Conference Information | |
Committee | SDM |
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Conference Date | 1998/8/20(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Molecular Dynamics Study of Inert Gas Irradiation Process on SiO_2 Surface |
Sub Title (in English) | |
Keyword(1) | Si Oxidation |
Keyword(2) | Inert Gas Irradiation |
Keyword(3) | Molecular Dynamics |
Keyword(4) | Computer Graphics |
1st Author's Name | Ryuji Miura |
1st Author's Affiliation | Department of Materials Chemistry, Graduate School of Engineering, Tohoku University() |
2nd Author's Name | Takayuki Onozu |
2nd Author's Affiliation | Department of Materials Chemistry, Graduate School of Engineering, Tohoku University |
3rd Author's Name | S. Salai Cheettu Ammal |
3rd Author's Affiliation | Department of Materials Chemistry, Graduate School of Engineering, Tohoku University |
4th Author's Name | Momoji Kubo |
4th Author's Affiliation | Department of Materials Chemistry, Graduate School of Engineering, Tohoku University |
5th Author's Name | Kazuo Teraishi |
5th Author's Affiliation | Department of Materials Chemistry, Graduate School of Engineering, Tohoku University |
6th Author's Name | Akira Miyamoto |
6th Author's Affiliation | Department of Materials Chemistry, Graduate School of Engineering, Tohoku University |
7th Author's Name | Yuji Saito |
7th Author's Affiliation | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University |
8th Author's Name | Ryu Kaihara |
8th Author's Affiliation | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University |
9th Author's Name | Katsuyuki Sekine |
9th Author's Affiliation | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University |
10th Author's Name | Masaki Hirayama |
10th Author's Affiliation | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University |
11th Author's Name | Tadahiro Ohmi |
11th Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University |
Date | 1998/8/20 |
Paper # | SDM98-116 |
Volume (vol) | vol.98 |
Number (no) | 242 |
Page | pp.pp.- |
#Pages | 7 |
Date of Issue |