Presentation 1998/8/20
Molecular Dynamics Study of Inert Gas Irradiation Process on SiO_2 Surface
Ryuji Miura, Takayuki Onozu, S. Salai Cheettu Ammal, Momoji Kubo, Kazuo Teraishi, Akira Miyamoto, Yuji Saito, Ryu Kaihara, Katsuyuki Sekine, Masaki Hirayama, Tadahiro Ohmi,
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Abstract(in English) Low-temperature Si oxidation is an important technology for the fabrication of the miniaturized semiconductor devices. Recently, inert gas ion irradiation process has attracted much attention as the solution for this subject. We have applied computational chemistry techniques, such as molecular dynamics (MD) and computer graphics (CG) to study the irradiation process of AR atom on amorphous-SiO_2 surface, and demonstrated the applicability of MD simulation and observed the activation process of amorphous-SiO_2 surface with Ar irradiation. We also observed that almost all the irradiation energy were conducted to the substrates after bombardment process.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Si Oxidation / Inert Gas Irradiation / Molecular Dynamics / Computer Graphics
Paper # SDM98-116
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Conference Information
Committee SDM
Conference Date 1998/8/20(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Molecular Dynamics Study of Inert Gas Irradiation Process on SiO_2 Surface
Sub Title (in English)
Keyword(1) Si Oxidation
Keyword(2) Inert Gas Irradiation
Keyword(3) Molecular Dynamics
Keyword(4) Computer Graphics
1st Author's Name Ryuji Miura
1st Author's Affiliation Department of Materials Chemistry, Graduate School of Engineering, Tohoku University()
2nd Author's Name Takayuki Onozu
2nd Author's Affiliation Department of Materials Chemistry, Graduate School of Engineering, Tohoku University
3rd Author's Name S. Salai Cheettu Ammal
3rd Author's Affiliation Department of Materials Chemistry, Graduate School of Engineering, Tohoku University
4th Author's Name Momoji Kubo
4th Author's Affiliation Department of Materials Chemistry, Graduate School of Engineering, Tohoku University
5th Author's Name Kazuo Teraishi
5th Author's Affiliation Department of Materials Chemistry, Graduate School of Engineering, Tohoku University
6th Author's Name Akira Miyamoto
6th Author's Affiliation Department of Materials Chemistry, Graduate School of Engineering, Tohoku University
7th Author's Name Yuji Saito
7th Author's Affiliation Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
8th Author's Name Ryu Kaihara
8th Author's Affiliation Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
9th Author's Name Katsuyuki Sekine
9th Author's Affiliation Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
10th Author's Name Masaki Hirayama
10th Author's Affiliation Department of Electronic Engineering, Graduate School of Engineering, Tohoku University
11th Author's Name Tadahiro Ohmi
11th Author's Affiliation New Industry Creation Hatchery Center, Tohoku University
Date 1998/8/20
Paper # SDM98-116
Volume (vol) vol.98
Number (no) 242
Page pp.pp.-
#Pages 7
Date of Issue