| Presentation | 1998/8/20 Direct Nitridation of Silicon Surface at Ultra-Low-Temperature by High-Density Plasma Katsuyuki Sekine, Yuji Saito, Masaki Hirayama, Tadahiro Ohmi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Direct nitridation of silicon surface can be realized at a temperature as low as 430℃ by using high-density plasma above 10^12cm^-3 featuring low ion bombardment energy below 7eV. This study results that stoichiometric silicon nitride can be obtained for the first time at a temperature of 430℃ by precise control of the nitrogen partial pressure to generate N^+_2 in plasma. Moreover, hysteresis of C-V curve attributed to charge traps in silicon nitride film can be reduced dramatically with adding hydrogen to Ar/N_2 plasma for terminating dangling bond with hydrogen. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Silicon Nitride / High-Density Plasma / Ion Bombardment / Gate Insulator |
| Paper # | SDM98-115 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/8/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Direct Nitridation of Silicon Surface at Ultra-Low-Temperature by High-Density Plasma |
| Sub Title (in English) | |
| Keyword(1) | Silicon Nitride |
| Keyword(2) | High-Density Plasma |
| Keyword(3) | Ion Bombardment |
| Keyword(4) | Gate Insulator |
| 1st Author's Name | Katsuyuki Sekine |
| 1st Author's Affiliation | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University() |
| 2nd Author's Name | Yuji Saito |
| 2nd Author's Affiliation | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University |
| 3rd Author's Name | Masaki Hirayama |
| 3rd Author's Affiliation | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University |
| 4th Author's Name | Tadahiro Ohmi |
| 4th Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University |
| Date | 1998/8/20 |
| Paper # | SDM98-115 |
| Volume (vol) | vol.98 |
| Number (no) | 242 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |