| Presentation | 1998/8/20 Excellent Silicon Dioxide Formation by High-Density Plasma Ryu Kaihara, Masaki Hirayama, Tadahiro Ohmi, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | High-integrity thin silicon dioxide (SiO_2) can be obtained at a temperature of 430℃ by a new high-density plasma source. The plasma source is characterized by very low ion bonbardment energy and excellent uniformity. The breakdown field (E_BD) of 15.8MV/cm and change-to-breakdown value (Q_BD) of 12.8C/cm^2 under constant current stress of 0.1A/cm^2 (substrate injection) were acheived by the He/O_2 plasma. These electrical properties were equivalent to those of thermal oxide film grown at a temperature of 900℃. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | High-density Plasma / Low temperature oxidation / low ion bombardment energy / He plasma |
| Paper # | SDM98-114 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 1998/8/20(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Excellent Silicon Dioxide Formation by High-Density Plasma |
| Sub Title (in English) | |
| Keyword(1) | High-density Plasma |
| Keyword(2) | Low temperature oxidation |
| Keyword(3) | low ion bombardment energy |
| Keyword(4) | He plasma |
| 1st Author's Name | Ryu Kaihara |
| 1st Author's Affiliation | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University() |
| 2nd Author's Name | Masaki Hirayama |
| 2nd Author's Affiliation | Department of Electronic Engineering, Graduate School of Engineering, Tohoku University |
| 3rd Author's Name | Tadahiro Ohmi |
| 3rd Author's Affiliation | New Industry Creation Hatchery Center, Tohoku University |
| Date | 1998/8/20 |
| Paper # | SDM98-114 |
| Volume (vol) | vol.98 |
| Number (no) | 242 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |