Presentation | 1998/5/22 Relation between OSF induced by B Ion Implantation and Gate Oxide Reliability Kenji Nakashima, Yukihiko Watanabe, Hirofumi Funabashi, Tomoyuki Yoshida, Yasuichi Mitsushima, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Effects of ion implantation, interstitial oxygen concentration, and heat treatment after ion implantation on the formation of OSFs induced by B ion implantation were investigated. The OSFs were formed during oxidation when interstitial oxygen coexisted with B ion implantation defects, and the density of the OSFs increased with oxygen concentration. From these results, it is found that B ion implantation defects form oxygen precipitates which acts as nuclei for OSFs. In addition, the relation between the OSFs induced by B ion implantation and gate oxide reliability was investigated. The degradation of the oxide reliability was found to corelate with the OSFs formation. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | boron / ion implantation / OSF / interstitial oxygen concentration / oxide / reliability |
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Conference Information | |
Committee | SDM |
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Conference Date | 1998/5/22(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Relation between OSF induced by B Ion Implantation and Gate Oxide Reliability |
Sub Title (in English) | |
Keyword(1) | boron |
Keyword(2) | ion implantation |
Keyword(3) | OSF |
Keyword(4) | interstitial oxygen concentration |
Keyword(5) | oxide |
Keyword(6) | reliability |
1st Author's Name | Kenji Nakashima |
1st Author's Affiliation | Toyota Central R&D Labs., Inc.() |
2nd Author's Name | Yukihiko Watanabe |
2nd Author's Affiliation | Toyota Central R&D Labs., Inc. |
3rd Author's Name | Hirofumi Funabashi |
3rd Author's Affiliation | Toyota Central R&D Labs., Inc. |
4th Author's Name | Tomoyuki Yoshida |
4th Author's Affiliation | Toyota Central R&D Labs., Inc. |
5th Author's Name | Yasuichi Mitsushima |
5th Author's Affiliation | Toyota Central R&D Labs., Inc. |
Date | 1998/5/22 |
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Volume (vol) | vol.98 |
Number (no) | 64 |
Page | pp.pp.- |
#Pages | 6 |
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