Presentation | 1998/5/22 H Plasma passivation of MOCVD grown GaAs-on-Si Gang Wang, Tetsuo Soga, Takashi Jimbo, Masayoshi Umeno, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The effects of plasma hydrogenation on the optical and electrical properties for GaAs-on-Si epitaxial layers characterized by I-V, PL, and DLTS methods. The hydrogenation provides a significant improvement of the PL properties. The deep level which is related to Si-defect complex was completely passivated, and the effect of the deep level passivation was still retained after annealing at 400℃ for 10 min. This suggests that the hydrogenation may be used to improve the properties of GaAs-on-Si devices. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | GaAs-on Si / H plasma / passivation / C-V / PL / DLTS |
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Committee | SDM |
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Conference Date | 1998/5/22(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | H Plasma passivation of MOCVD grown GaAs-on-Si |
Sub Title (in English) | |
Keyword(1) | GaAs-on Si |
Keyword(2) | H plasma |
Keyword(3) | passivation |
Keyword(4) | C-V |
Keyword(5) | PL |
Keyword(6) | DLTS |
1st Author's Name | Gang Wang |
1st Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Tecnology() |
2nd Author's Name | Tetsuo Soga |
2nd Author's Affiliation | Department of Environmental Technology and Urbon Planning, Nagoya Institute of Tecnology |
3rd Author's Name | Takashi Jimbo |
3rd Author's Affiliation | Department of Environmental Technology and Urbon Planning, Nagoya Institute of Tecnology |
4th Author's Name | Masayoshi Umeno |
4th Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Tecnology |
Date | 1998/5/22 |
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Volume (vol) | vol.98 |
Number (no) | 64 |
Page | pp.pp.- |
#Pages | 6 |
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