Presentation 1998/5/21
Fabrication of CuInSe_2/CdS diode by Laser Ablation
Shin'ichi KURANOUCHI, Nobutaka TANAHASHI, Yoshihito HIROE, Akira YOSHIDA,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) I-III-VI compound semiconductor, such as CuInSe_2, has been considered as one of the most potential candidates for absorber material in thin film solar cell with high conversion efficiency and low cost. In this study, to apply the laser ablation technique for fabrication of thin film solar cell, the deposition conditions of CuInSe_2 thin films for absorber layer and CdS thin films for window layer has been investigated. The CdS thin films prepared at substrate temperature between 200℃ and 500℃ was strongly oriented to (0002) plane of wurzite structure and had high optical transmittance. From the results of carrier concentration measurement, the suitable condition to fabricate CuInSe_2 thin films for solar cell has been determined. CdS/CuInSe_2 heterojunction diode has been fabricated by laser ablation. The I-V measurement showed rectification characteristics, and photovoltaic effect was observed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) CIS / CdS / solar cell / laser ablation / compound semiconductor
Paper #
Date of Issue

Conference Information
Committee SDM
Conference Date 1998/5/21(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication of CuInSe_2/CdS diode by Laser Ablation
Sub Title (in English)
Keyword(1) CIS
Keyword(2) CdS
Keyword(3) solar cell
Keyword(4) laser ablation
Keyword(5) compound semiconductor
1st Author's Name Shin'ichi KURANOUCHI
1st Author's Affiliation Toyohashi University of Technology()
2nd Author's Name Nobutaka TANAHASHI
2nd Author's Affiliation Toyohashi University of Technology
3rd Author's Name Yoshihito HIROE
3rd Author's Affiliation Toyohashi University of Technology
4th Author's Name Akira YOSHIDA
4th Author's Affiliation Toyohashi University of Technology
Date 1998/5/21
Paper #
Volume (vol) vol.98
Number (no) 63
Page pp.pp.-
#Pages 8
Date of Issue