Presentation | 1998/5/21 Fabrication of CuInSe_2/CdS diode by Laser Ablation Shin'ichi KURANOUCHI, Nobutaka TANAHASHI, Yoshihito HIROE, Akira YOSHIDA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | I-III-VI compound semiconductor, such as CuInSe_2, has been considered as one of the most potential candidates for absorber material in thin film solar cell with high conversion efficiency and low cost. In this study, to apply the laser ablation technique for fabrication of thin film solar cell, the deposition conditions of CuInSe_2 thin films for absorber layer and CdS thin films for window layer has been investigated. The CdS thin films prepared at substrate temperature between 200℃ and 500℃ was strongly oriented to (0002) plane of wurzite structure and had high optical transmittance. From the results of carrier concentration measurement, the suitable condition to fabricate CuInSe_2 thin films for solar cell has been determined. CdS/CuInSe_2 heterojunction diode has been fabricated by laser ablation. The I-V measurement showed rectification characteristics, and photovoltaic effect was observed. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | CIS / CdS / solar cell / laser ablation / compound semiconductor |
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Conference Information | |
Committee | SDM |
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Conference Date | 1998/5/21(1days) |
Place (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Fabrication of CuInSe_2/CdS diode by Laser Ablation |
Sub Title (in English) | |
Keyword(1) | CIS |
Keyword(2) | CdS |
Keyword(3) | solar cell |
Keyword(4) | laser ablation |
Keyword(5) | compound semiconductor |
1st Author's Name | Shin'ichi KURANOUCHI |
1st Author's Affiliation | Toyohashi University of Technology() |
2nd Author's Name | Nobutaka TANAHASHI |
2nd Author's Affiliation | Toyohashi University of Technology |
3rd Author's Name | Yoshihito HIROE |
3rd Author's Affiliation | Toyohashi University of Technology |
4th Author's Name | Akira YOSHIDA |
4th Author's Affiliation | Toyohashi University of Technology |
Date | 1998/5/21 |
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Volume (vol) | vol.98 |
Number (no) | 63 |
Page | pp.pp.- |
#Pages | 8 |
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