Presentation | 1998/5/21 Formation of ZnS by photochemical deposition Yuhei Ono, Fumitaka Goto, Masaya Ichimura, Eisuke Arai, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | ZnS films were successfully formed on a glass substrate in an aqueous solution containing S_2O_3^<2-> and Zn^<2+> ions by photochemical reactions. S_2O_3^<2-> ions in the growth solution absorb ultra-violet light of wavelengths shorter than about 300nm, and the excited S_2O_3^<2-> ions supply sulfur atoms and electrons to the metal ions. Thus, the formation reaction of the sulfide semiconductor occurs only in the illuminated region. Zn and S do not combine each other in the deposited film. The composition of film varied with Zn^<2+> content in the solution and became stoichiometric by annealing at 500℃. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | aqueous solution / thiosalfate ion / ultra-violet light / photochemical reaction / ZnS |
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Conference Information | |
Committee | SDM |
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Conference Date | 1998/5/21(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Formation of ZnS by photochemical deposition |
Sub Title (in English) | |
Keyword(1) | aqueous solution |
Keyword(2) | thiosalfate ion |
Keyword(3) | ultra-violet light |
Keyword(4) | photochemical reaction |
Keyword(5) | ZnS |
1st Author's Name | Yuhei Ono |
1st Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology() |
2nd Author's Name | Fumitaka Goto |
2nd Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Tecnology |
3rd Author's Name | Masaya Ichimura |
3rd Author's Affiliation | Center for Cooperative Research |
4th Author's Name | Eisuke Arai |
4th Author's Affiliation | Department of Electrical and Computer Engineering, Nagoya Institute of Technology |
Date | 1998/5/21 |
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Volume (vol) | vol.98 |
Number (no) | 63 |
Page | pp.pp.- |
#Pages | 6 |
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