Presentation 1998/5/21
Formation of ZnS by photochemical deposition
Yuhei Ono, Fumitaka Goto, Masaya Ichimura, Eisuke Arai,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) ZnS films were successfully formed on a glass substrate in an aqueous solution containing S_2O_3^<2-> and Zn^<2+> ions by photochemical reactions. S_2O_3^<2-> ions in the growth solution absorb ultra-violet light of wavelengths shorter than about 300nm, and the excited S_2O_3^<2-> ions supply sulfur atoms and electrons to the metal ions. Thus, the formation reaction of the sulfide semiconductor occurs only in the illuminated region. Zn and S do not combine each other in the deposited film. The composition of film varied with Zn^<2+> content in the solution and became stoichiometric by annealing at 500℃.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) aqueous solution / thiosalfate ion / ultra-violet light / photochemical reaction / ZnS
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Committee SDM
Conference Date 1998/5/21(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Formation of ZnS by photochemical deposition
Sub Title (in English)
Keyword(1) aqueous solution
Keyword(2) thiosalfate ion
Keyword(3) ultra-violet light
Keyword(4) photochemical reaction
Keyword(5) ZnS
1st Author's Name Yuhei Ono
1st Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology()
2nd Author's Name Fumitaka Goto
2nd Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Tecnology
3rd Author's Name Masaya Ichimura
3rd Author's Affiliation Center for Cooperative Research
4th Author's Name Eisuke Arai
4th Author's Affiliation Department of Electrical and Computer Engineering, Nagoya Institute of Technology
Date 1998/5/21
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Volume (vol) vol.98
Number (no) 63
Page pp.pp.-
#Pages 6
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