Presentation 1998/5/21
Growth of GaInSb Bulk Alloy from Ternary Solution
Akira Tanaka, Tsuyoshi Yoneyama, Mitsunori Yagi, Masakazu Kimura, Tokuzo Sukegawa,
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Abstract(in English) In order to advance Iattice-matched devices, alloy substrates with a desired lattice constant are demanded. In this paper, the solute-feeding Czochralski method developed for the growth of homogeneous bulk alloys is applied to the growth of GaInSb alloy from Ga-In-Sb solution. By adjusting the growth condition so as to suppress the influence of thermal fluctuation on alloy composition, a GaInSb alloy with InSb content of about 0.6 was successfully pulled.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaInSb alloy / Czochralski method / solution growth
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Committee SDM
Conference Date 1998/5/21(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of GaInSb Bulk Alloy from Ternary Solution
Sub Title (in English)
Keyword(1) GaInSb alloy
Keyword(2) Czochralski method
Keyword(3) solution growth
1st Author's Name Akira Tanaka
1st Author's Affiliation Research Institute of Electronics, Shizuoka University()
2nd Author's Name Tsuyoshi Yoneyama
2nd Author's Affiliation Research Institute of Electronics, Shizuoka University
3rd Author's Name Mitsunori Yagi
3rd Author's Affiliation Research Institute of Electronics, Shizuoka University
4th Author's Name Masakazu Kimura
4th Author's Affiliation Research Institute of Electronics, Shizuoka University
5th Author's Name Tokuzo Sukegawa
5th Author's Affiliation Research Institute of Electronics, Shizuoka University
Date 1998/5/21
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Volume (vol) vol.98
Number (no) 63
Page pp.pp.-
#Pages 5
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