Presentation 1998/4/24
Fabrication and characterization of 14-nm-gate-length EJ-MOSFETs
Hisao Kawaura, Toshitsugu Sakamoto, Yukinori Ochiai, Jun'ichi Fujita, Toshio Baba,
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Abstract(in English) We have fabricated Electrically variable shallow Junction MOSFETs(EJ-MOSFETs)with electrically induced ultrashallow source/drain regions to investigate transistor characteristics and physical phenomena in ultra-fine gate MOSFETs.By using electron-beam direct writing on an ultra-high resolution negative resist(calixarene), we could achive a ultrafine gate length of 14 nm.Although we observed the large leakage current at the gate length less than 20 nm, we confirmed the room-temperature transistor operation of the 14-nm-gate-length device.The leakage current was not caused by quantum mechanical processes but by classical thermal processes.
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Keyword(in English) EJ-MOSFET / silicon / calixarene / short-channel effects / ultra-fine gate
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Committee SDM
Conference Date 1998/4/24(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Fabrication and characterization of 14-nm-gate-length EJ-MOSFETs
Sub Title (in English)
Keyword(1) EJ-MOSFET
Keyword(2) silicon
Keyword(3) calixarene
Keyword(4) short-channel effects
Keyword(5) ultra-fine gate
1st Author's Name Hisao Kawaura
1st Author's Affiliation Fundamental Research Labs., NEC Corporation()
2nd Author's Name Toshitsugu Sakamoto
2nd Author's Affiliation Fundamental Research Labs., NEC Corporation
3rd Author's Name Yukinori Ochiai
3rd Author's Affiliation Silicon Systems Research Labs., NEC Corporation
4th Author's Name Jun'ichi Fujita
4th Author's Affiliation Fundamental Research Labs., NEC Corporation
5th Author's Name Toshio Baba
5th Author's Affiliation Fundamental Research Labs., NEC Corporation
Date 1998/4/24
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Volume (vol) vol.98
Number (no) 31
Page pp.pp.-
#Pages 6
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