| Presentation | 1998/4/23 Characterization of Quantum Effect in Silicon Single Electron Transistor Hiroki Ishikuro, Toshiro Hiramoto, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Silicon single electron transistors are fabricated in the form of point-contact MOSFET.Coulomb blockade oscillations are observed at room temperature, and fine structures and negative differential conductance due to quantum effect and resonant tunneling are observed at low temperatures.The energy states in the dot are derived from the experimental data.The single electron charging energy and energy separation between quantum levels in the dot are larger than the thermal energy at room temperature.It is suggested that the quantitative understanding of quantum effects is essential for the design of 10 nm size MOSFET and single electron devices. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Single electron devices / MOSFET / Quantum effects / Resonant tunnel / Quantum dot / Coulomb blockade |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/4/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of Quantum Effect in Silicon Single Electron Transistor |
| Sub Title (in English) | |
| Keyword(1) | Single electron devices |
| Keyword(2) | MOSFET |
| Keyword(3) | Quantum effects |
| Keyword(4) | Resonant tunnel |
| Keyword(5) | Quantum dot |
| Keyword(6) | Coulomb blockade |
| 1st Author's Name | Hiroki Ishikuro |
| 1st Author's Affiliation | Institute of Industrial Science, University of Tokyo VLSI Design and Education Center, University of Tokyo() |
| 2nd Author's Name | Toshiro Hiramoto |
| 2nd Author's Affiliation | Institute of Industrial Science, University of Tokyo VLSI Design and Education Center, University of Tokyo |
| Date | 1998/4/23 |
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| Volume (vol) | vol.98 |
| Number (no) | 30 |
| Page | pp.pp.- |
| #Pages | 5 |
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