| Presentation | 1998/4/23 Formation of metal nanocrystals in thin thermally grown SiO_2 film via low energy ion implantation and observation of their single electron charging effect Anri Nakajima, Toshiro Futatsugi, Hiroshi Nakao, Tatsuya Usuki, Naoto Horiguchi, Naoki Yokoyama, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We fabricated Sn and Sb nanocrystals in thin thermally grown SiO_2 film via low energy ion implantation.The formed Sn and Sb nanocrystals hae good size and position uniformity.A narrow as-implanted profile due to the low energy ion implantation and the compressive strain that exists near the transition region are considered to contribute to the uniformity.The current-voltage characteristics of the diode structures including the above Sn or Sb nanocrystals show a Coulomb blockade region around 0 V and a Coulomb staircase at 4.2K.The Coulomb blockade region was observed until reaching a temperature of 77K.The fabrication technique offers the possibility of developing practical single electron devices |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Sn / Sb / nanocrystal / single electron charging effect / thin oxide / transition region / low energy ion implantation |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/4/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Formation of metal nanocrystals in thin thermally grown SiO_2 film via low energy ion implantation and observation of their single electron charging effect |
| Sub Title (in English) | |
| Keyword(1) | Sn |
| Keyword(2) | Sb |
| Keyword(3) | nanocrystal |
| Keyword(4) | single electron charging effect |
| Keyword(5) | thin oxide |
| Keyword(6) | transition region |
| Keyword(7) | low energy ion implantation |
| 1st Author's Name | Anri Nakajima |
| 1st Author's Affiliation | Fujitsu Laboratories LTD.:(Present address)Research Center for Nanodevices and Systems, Hiroshima University() |
| 2nd Author's Name | Toshiro Futatsugi |
| 2nd Author's Affiliation | Fujitsu Laboratories LTD. |
| 3rd Author's Name | Hiroshi Nakao |
| 3rd Author's Affiliation | Fujitsu Laboratories LTD. |
| 4th Author's Name | Tatsuya Usuki |
| 4th Author's Affiliation | Fujitsu Laboratories LTD. |
| 5th Author's Name | Naoto Horiguchi |
| 5th Author's Affiliation | Fujitsu Laboratories LTD. |
| 6th Author's Name | Naoki Yokoyama |
| 6th Author's Affiliation | Fujitsu Laboratories LTD. |
| Date | 1998/4/23 |
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| Volume (vol) | vol.98 |
| Number (no) | 30 |
| Page | pp.pp.- |
| #Pages | 6 |
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