| Presentation | 1998/4/23 The Experimental Consideration on Metal/Insulator Tunnel Transistor Kouji Fujimaru, Ryouta Sasajima, Hideki Matsumura, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The metal/insulator tunnel transistor (MTT), which consists of the only metal and insulator, is proposed by our group.In the MITT, a nanometer-scale insulating region (tunnel insulator) is sandwiched laterally between metal source and drain electrodes.Just above the tunnel insulator, a gate electrode is placed upon a gate insulating film (gate insulator).The tunneling currents between the source and drain are controlled by the gate voltage through changing barrier width of tunnel insulator.This paper is to demonstrate that the switching operation can be firstly observed experimentally by fabricating prototype of MITT. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | metal/insulator tunnel transistor / barrier height / tunnel currents / anodic oxidation |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1998/4/23(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The Experimental Consideration on Metal/Insulator Tunnel Transistor |
| Sub Title (in English) | |
| Keyword(1) | metal/insulator tunnel transistor |
| Keyword(2) | barrier height |
| Keyword(3) | tunnel currents |
| Keyword(4) | anodic oxidation |
| 1st Author's Name | Kouji Fujimaru |
| 1st Author's Affiliation | School of Materials Science, Japan Advanced Institute of Science and Technology() |
| 2nd Author's Name | Ryouta Sasajima |
| 2nd Author's Affiliation | School of Materials Science, Japan Advanced Institute of Science and Technology |
| 3rd Author's Name | Hideki Matsumura |
| 3rd Author's Affiliation | School of Materials Science, Japan Advanced Institute of Science and Technology |
| Date | 1998/4/23 |
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| Volume (vol) | vol.98 |
| Number (no) | 30 |
| Page | pp.pp.- |
| #Pages | 7 |
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