| Presentation | 1993/12/9 Epitaxial growth of Al/Al_2O_3 multilayer structure on Si substrate by ICB and its application to resonant tunneling device Nobumitsu Hirai, Masahiro Ishida, Kunio Akedo, Gikan Takaoka, Isao Yamada, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We produced epitaxial Al, Al_2O_3/Al structures on Si substrates by ICB.The results obtained so far for Al/Al_2O_3/Al structure showed that a tunneling current was observed and the breakdown field was more than 10^7V/cm at room temperature if the thickness of the Al_2O_3 layer was a few monolayers. On the other hand,We calculated I-V characteristics of Al, Al_2O_ 3triple barrier RTD by the simulations which use transfer matrix method.With the result that the resonant voltage was 1.23V and the P-V ratio was about 100 for a structure.the well width determine the quantum levels and resonant voltage and the barrier width determine the current characteristics such as the peak current and the P-V ratio. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | resonant tunneling diode / transfer matrix method / ICB / epitaxial / Al / Al_2O_3 |
| Paper # | SDM93-171 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1993/12/9(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Epitaxial growth of Al/Al_2O_3 multilayer structure on Si substrate by ICB and its application to resonant tunneling device |
| Sub Title (in English) | |
| Keyword(1) | resonant tunneling diode |
| Keyword(2) | transfer matrix method |
| Keyword(3) | ICB |
| Keyword(4) | epitaxial |
| Keyword(5) | Al |
| Keyword(6) | Al_2O_3 |
| 1st Author's Name | Nobumitsu Hirai |
| 1st Author's Affiliation | Ion Beam Engineering Experimental Labolatory,Faculty of Engineering,Kyoto University() |
| 2nd Author's Name | Masahiro Ishida |
| 2nd Author's Affiliation | Ion Beam Engineering Experimental Labolatory,Faculty of Engineering,Kyoto University |
| 3rd Author's Name | Kunio Akedo |
| 3rd Author's Affiliation | Ion Beam Engineering Experimental Labolatory,Faculty of Engineering,Kyoto University |
| 4th Author's Name | Gikan Takaoka |
| 4th Author's Affiliation | Ion Beam Engineering Experimental Labolatory,Faculty of Engineering,Kyoto University |
| 5th Author's Name | Isao Yamada |
| 5th Author's Affiliation | Ion Beam Engineering Experimental Labolatory,Faculty of Engineering,Kyoto University |
| Date | 1993/12/9 |
| Paper # | SDM93-171 |
| Volume (vol) | vol.93 |
| Number (no) | 368 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |