Presentation 1993/12/9
Transient Phase Diagram for a-Si in Rapid Thermal Processes
Akio Kitagawa, Masakuni Suzuki, Lin Huang,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In the phase transition involvmg non-equilibrium phases,the transition temperature is a function of the heating or cooling rate.The heating rate dependent transition temperature was calailated numerically from the temperature dependence of the incubation period for nucleation of the new phase.In addition,a model of the glass transition in a-Si was developed.The results are summarized in ′Transient Phase Diagram′ that is,a phase diagr am describing transient phase and their transition temperatures as a function of the heafang rate.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) amorphous silicon / crystallization / incubation period / supercooled liquid / glass transition
Paper # SDM93-153
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Conference Information
Committee SDM
Conference Date 1993/12/9(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Transient Phase Diagram for a-Si in Rapid Thermal Processes
Sub Title (in English)
Keyword(1) amorphous silicon
Keyword(2) crystallization
Keyword(3) incubation period
Keyword(4) supercooled liquid
Keyword(5) glass transition
1st Author's Name Akio Kitagawa
1st Author's Affiliation Department of Electrical & Computer Engineering,Faculty of Technology,Kanazawa University()
2nd Author's Name Masakuni Suzuki
2nd Author's Affiliation Department of Electrical & Computer Engineering,Faculty of Technology,Kanazawa University
3rd Author's Name Lin Huang
3rd Author's Affiliation Department of Electrical & Computer Engineering,Faculty of Technology,Kanazawa University
Date 1993/12/9
Paper # SDM93-153
Volume (vol) vol.93
Number (no) 368
Page pp.pp.-
#Pages 8
Date of Issue