| Presentation | 1993/11/26 Two-dimensional power-line selection scheme for low subthreshold- current multi-gigabit DRAMs Takeshi Sakata, Masashi Horiguchi, Masakazu Aoki, Kiyoo Itoh, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Two-dimensional power-line selection scheme for an iterative CMOS circuit block,is proposed to reduce the subthreshold current. In this scheme,a block is divided into subblocks of two- dimensional arrangement and selectively energized by two- dimensional power-line selection.The scheme combined with dual word-line structure permits a drastic active current reduction to one sixteenth,from 363 mA to 22 mA,for a 16-Gb DRAM. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | DRAM / gigabit / threshold voltage / subthreshold current / two dimensional / power line |
| Paper # | SDM93-147,ICD93-141 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1993/11/26(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Two-dimensional power-line selection scheme for low subthreshold- current multi-gigabit DRAMs |
| Sub Title (in English) | |
| Keyword(1) | DRAM |
| Keyword(2) | gigabit |
| Keyword(3) | threshold voltage |
| Keyword(4) | subthreshold current |
| Keyword(5) | two dimensional |
| Keyword(6) | power line |
| 1st Author's Name | Takeshi Sakata |
| 1st Author's Affiliation | Central Research Laboratory,Hitachi() |
| 2nd Author's Name | Masashi Horiguchi |
| 2nd Author's Affiliation | Central Research Laboratory,Hitachi |
| 3rd Author's Name | Masakazu Aoki |
| 3rd Author's Affiliation | Central Research Laboratory,Hitachi |
| 4th Author's Name | Kiyoo Itoh |
| 4th Author's Affiliation | Central Research Laboratory,Hitachi |
| Date | 1993/11/26 |
| Paper # | SDM93-147,ICD93-141 |
| Volume (vol) | vol.93 |
| Number (no) | 349 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |