Presentation 1993/4/22
Water Adsorption and Desorption Mechanism of CVD SiO Films
Shunichi Tokitoh, Hidetsugu Uchida, Norio Hirashita,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) Thermal desorption and Fourier transform infrared spectroscopies were used to study water adsorption and desorption processes of various CVD SiO films.Significant water desorption and concomitant structural changes were obsorved for the films during subsequent heat treatments between 100 and 700℃.CVD oxide films exhibited thr ee distinct water desorption states.The desorption temperatures were approximately 100-200℃ for the first state,150-300℃ for the second state,and 350-650℃ for the third state.Air exposure experim ents revealed that the first and second states resulted from absorbed water and the third state from constitution water.The first and second desorption states were confirmed to originate from liquid like water and water molecules hydrogen-bonded to Si- OH bonds at macropore sites in the films,respectively.The third desoption state was found to result from Si-OH bonds formed during the film growth.This desorption water was considered to be accompanied by a microstructural change of the films.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) CVD oxide / water adsorption / water desorption / desorption states / desorption mechanism
Paper # SDM93-9
Date of Issue

Conference Information
Committee SDM
Conference Date 1993/4/22(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Water Adsorption and Desorption Mechanism of CVD SiO Films
Sub Title (in English)
Keyword(1) CVD oxide
Keyword(2) water adsorption
Keyword(3) water desorption
Keyword(4) desorption states
Keyword(5) desorption mechanism
1st Author's Name Shunichi Tokitoh
1st Author's Affiliation VLSI R&D Center,Oki Electoric Industry Co.,Ltd.()
2nd Author's Name Hidetsugu Uchida
2nd Author's Affiliation VLSI R&D Center,Oki Electoric Industry Co.,Ltd.
3rd Author's Name Norio Hirashita
3rd Author's Affiliation VLSI R&D Center,Oki Electoric Industry Co.,Ltd.
Date 1993/4/22
Paper # SDM93-9
Volume (vol) vol.93
Number (no) 7
Page pp.pp.-
#Pages 6
Date of Issue