| Presentation | 1993/4/22 Experimental evidence for Lognormal distribution of the capture cross-section of hole traps in MOS structure D.M.Khosru Quazi, Kenji Taniguchi, Chihiro Hamaguchi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Substrate hot-hole injection experiments have been carried out using pMOS transistors with very thin gate oxides to investigate hole trapping phenomena in the oxide.A charge centroid at a distance of 3.2 nm from the Si, SiO_2 interface is found to describe the oxide thickness dependence of threshold voltage shift in a successful manner for the range used in this study(t_ox>=4.6 to 15nm).Capture cross-section of oxide hole traps is found to have distributed values between 10^-15> and 10^-13>cm^2 and can well be described by a Lognormal distribution function with a mean value of 0.7×10^-14> cm^2.With this distribution of capture cross -section,we proposed a model for trapped holes in the oxide which showed excellent agreement with the experimental data. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | pMOS transistor / hole trap / charge centroid / capture cross- section / Lognormal distribution |
| Paper # | SDM93-8 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1993/4/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Experimental evidence for Lognormal distribution of the capture cross-section of hole traps in MOS structure |
| Sub Title (in English) | |
| Keyword(1) | pMOS transistor |
| Keyword(2) | hole trap |
| Keyword(3) | charge centroid |
| Keyword(4) | capture cross- section |
| Keyword(5) | Lognormal distribution |
| 1st Author's Name | D.M.Khosru Quazi |
| 1st Author's Affiliation | Faculty of Engineering,Osaka University() |
| 2nd Author's Name | Kenji Taniguchi |
| 2nd Author's Affiliation | Faculty of Engineering,Osaka University |
| 3rd Author's Name | Chihiro Hamaguchi |
| 3rd Author's Affiliation | Faculty of Engineering,Osaka University |
| Date | 1993/4/22 |
| Paper # | SDM93-8 |
| Volume (vol) | vol.93 |
| Number (no) | 7 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |