| Presentation | 1993/4/22 Observation of Sinative oxide growth using FT-IR-ATR and FT-IR-RAS Shuzo Fujimura, Hiroki Ogawa, Kenji Ishikawa, Carlos Inomata, Haruhisa Mori, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The very early stage of Si native oxide growth on an atomically flat Si(111)surface in pure water was observed using Fourier- transform Infrared Attenuated Total Refflection Spectroscopy(FT-IR- ATR)and Fourier-transform Infrared Reflection Absorption Spectroscopy(FT-IR-RAS).We measured the Si-H signal by FT-IR-ATR and measured the Si-O signal by FT-IR-RAS.The change in the Si-H signal showed that oxidation did not start at the step edge of the Si surface.RAS spectra of the oxidized surface was explained as precipitated oxide particles in the thin surface Si layer.This suggests that native oxide was not growing layer-by-layer. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | FT-IR-ART / FT-IR-RAS / Native oxide / Si(111)surface / Precipitated oxide |
| Paper # | SMD93-7 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1993/4/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Observation of Sinative oxide growth using FT-IR-ATR and FT-IR-RAS |
| Sub Title (in English) | |
| Keyword(1) | FT-IR-ART |
| Keyword(2) | FT-IR-RAS |
| Keyword(3) | Native oxide |
| Keyword(4) | Si(111)surface |
| Keyword(5) | Precipitated oxide |
| 1st Author's Name | Shuzo Fujimura |
| 1st Author's Affiliation | Basic Process Development Division,Fujitsu() |
| 2nd Author's Name | Hiroki Ogawa |
| 2nd Author's Affiliation | Fujitsu |
| 3rd Author's Name | Kenji Ishikawa |
| 3rd Author's Affiliation | Basic Process Development Division,Fujitsu |
| 4th Author's Name | Carlos Inomata |
| 4th Author's Affiliation | Basic Process Development Division,Fujitsu |
| 5th Author's Name | Haruhisa Mori |
| 5th Author's Affiliation | Basic Process Development Division,Fujitsu |
| Date | 1993/4/22 |
| Paper # | SMD93-7 |
| Volume (vol) | vol.93 |
| Number (no) | 7 |
| Page | pp.pp.- |
| #Pages | 8 |
| Date of Issue | |