| Presentation | 1993/4/22 Dependence of very thin oxide quality on silicon water surface orientation,Dependence of electric reliability and structure of oxide film on silicon water surface orientation Kou Nakamura, Kouichi Matsumoto, Koji Makihara, Kazuma Yamamoto, Jun Takano, Tadahiro Ohmi, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The Si-SiO_2 interface microroughness and the reliability of very thin gate oxides are studied using Si(100)and Si(111)wafers. For oxides more than 10nm on Si(111),the Si-SiO_2 interface microroughness increases and the dielectric breakdown characteristics of very thin gate oxides are degraded as the oxide gets thicker.The oxide films formed on Si(111)are inferior to those on Si(100)in the reliability of very thin gate oxide under the same level in Si-SiO_2 interface microroughness,and the oxide films formed on Si(111)are different from those on Si(100)in the structure.Silicon wafer surface orientation is one of the most important factors that determine oxide quality. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiO_2 / Si wafer surface orientation / interface microroughness / binding energy / reliability |
| Paper # | SDM93-6 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1993/4/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Dependence of very thin oxide quality on silicon water surface orientation,Dependence of electric reliability and structure of oxide film on silicon water surface orientation |
| Sub Title (in English) | |
| Keyword(1) | SiO_2 |
| Keyword(2) | Si wafer surface orientation |
| Keyword(3) | interface microroughness |
| Keyword(4) | binding energy |
| Keyword(5) | reliability |
| 1st Author's Name | Kou Nakamura |
| 1st Author's Affiliation | Department of Electric Engineering,Faculty of Engineering,Tohoku University() |
| 2nd Author's Name | Kouichi Matsumoto |
| 2nd Author's Affiliation | Department of Electric Engineering,Faculty of Engineering,Tohoku University |
| 3rd Author's Name | Koji Makihara |
| 3rd Author's Affiliation | Department of Electric Engineering,Faculty of Engineering,Tohoku University |
| 4th Author's Name | Kazuma Yamamoto |
| 4th Author's Affiliation | Department of Electric Engineering,Faculty of Engineering,Tohoku University |
| 5th Author's Name | Jun Takano |
| 5th Author's Affiliation | Department of Electric Engineering,Faculty of Engineering,Tohoku University |
| 6th Author's Name | Tadahiro Ohmi |
| 6th Author's Affiliation | Department of Electric Engineering,Faculty of Engineering,Tohoku University |
| Date | 1993/4/22 |
| Paper # | SDM93-6 |
| Volume (vol) | vol.93 |
| Number (no) | 7 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |