| Presentation | 1993/4/22 Intial Stage of the Thermal Oxidation on Si(111)7×7 Surtace. Yukinori Ono, Michiharu Tabe, Hiroyuki Kageshima, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The initial stages of the thermal oxidation process on Si(111)7× 7 surfaces have been studied using STM,XPS and STM simulation based on the empirical tight binding method.The thermal(600℃)oxida tion process is described as follows:In the very early stage, island oxides with a diameter of 10-100Å are formed.These islands have a local thickness of 2-3 Si layers.(On the other hand,room- temperature oxides are as small as single stoms and scattered randomly over the entire surface.)The island oxides grow in both lateral and vertical directions with the increased oxygen exposure. After further oxidation,the islands coalesce into a continuous oxide film. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Si / SiO_2 / thermal oxidation / STM / XPS / empirical tight binding method |
| Paper # | SDM93-5 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
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| Conference Date | 1993/4/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Intial Stage of the Thermal Oxidation on Si(111)7×7 Surtace. |
| Sub Title (in English) | |
| Keyword(1) | Si |
| Keyword(2) | SiO_2 |
| Keyword(3) | thermal oxidation |
| Keyword(4) | STM |
| Keyword(5) | XPS |
| Keyword(6) | empirical tight binding method |
| 1st Author's Name | Yukinori Ono |
| 1st Author's Affiliation | NTT LSI Laboratories() |
| 2nd Author's Name | Michiharu Tabe |
| 2nd Author's Affiliation | NTT LSI Laboratories |
| 3rd Author's Name | Hiroyuki Kageshima |
| 3rd Author's Affiliation | NTT LSI Laboratories |
| Date | 1993/4/22 |
| Paper # | SDM93-5 |
| Volume (vol) | vol.93 |
| Number (no) | 7 |
| Page | pp.pp.- |
| #Pages | 7 |
| Date of Issue | |