| Presentation | 1993/4/22 Low-temperature Si epitaxial growth on HF-treated substrates and evaluation of epitaxial layer/Si substrate interface. Akihiro Miyauchi, Yousuke Inoue, Katsuhisa Usami, Takaya Suzuki, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Low-temperature Si epitaxial growth on HF-treated Si substrates were investigated.The condition of HF treatment for the epitaxial growth with lowest stacking fault density was dipping in the 5%HF solution without ultra-pure water rinse.Epitaxial growth above 580℃ were achieved under higher growth temperature and lower H_2O concentration in the reaction gases.Low-temperature (500-550℃) epi taxial growth films were obtained under low H_2O partial pressure in the growth ambient. It was observed that there were discrete contaminated areas with 1.4 nm thickness at the interface between epitaxial layer and Si substrate. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Silicon / epitaxial growth / HF-treatment / interface / oxidation / low pressure growth |
| Paper # | SDM93-4 |
| Date of Issue |
| Conference Information | |
| Committee | SDM |
|---|---|
| Conference Date | 1993/4/22(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low-temperature Si epitaxial growth on HF-treated substrates and evaluation of epitaxial layer/Si substrate interface. |
| Sub Title (in English) | |
| Keyword(1) | Silicon |
| Keyword(2) | epitaxial growth |
| Keyword(3) | HF-treatment |
| Keyword(4) | interface |
| Keyword(5) | oxidation |
| Keyword(6) | low pressure growth |
| 1st Author's Name | Akihiro Miyauchi |
| 1st Author's Affiliation | Hitachi Research Laboratory,Hitachi Ltd.() |
| 2nd Author's Name | Yousuke Inoue |
| 2nd Author's Affiliation | Hitachi Research Laboratory,Hitachi Ltd. |
| 3rd Author's Name | Katsuhisa Usami |
| 3rd Author's Affiliation | Hitachi Research Laboratory,Hitachi Ltd. |
| 4th Author's Name | Takaya Suzuki |
| 4th Author's Affiliation | Hitachi Research Laboratory,Hitachi Ltd. |
| Date | 1993/4/22 |
| Paper # | SDM93-4 |
| Volume (vol) | vol.93 |
| Number (no) | 7 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |