Presentation 1993/4/22
Prevention effect of microroughness on Si wafer surface in buffered hydrogen fluoride by surfactant addition
Mitsuo Miyamoto, Naohide Kita, Shoichi Ishida, Toshio Tatsuno,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) It was realized that the generation of microroughness on Si wafer surface in buffered hydrogen fluoride(BHF) was prevented by several 10 ppm order addition of surfactant.It was founded that the suppression effect of microroughness was observed by 50 ppm surfactant addition.It was confirmed that the suppression effect of microroughness on Si wafer surface in BHF contained surfactant is owing to suppressing the dissolution of Si into BHF from Si wafer,and the microroughness was also suppressed by lowering NH_4F concentration in BHF.Moreover,the relation between the etching rate of various Si oxide filmes by conventional BHF and NH_4F concentration in BHF was investigated.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Buffered hydrogen fluoride / Surfactant / Si wafer / Microroughness / Etching
Paper # SDM93-2
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Conference Information
Committee SDM
Conference Date 1993/4/22(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Prevention effect of microroughness on Si wafer surface in buffered hydrogen fluoride by surfactant addition
Sub Title (in English)
Keyword(1) Buffered hydrogen fluoride
Keyword(2) Surfactant
Keyword(3) Si wafer
Keyword(4) Microroughness
Keyword(5) Etching
1st Author's Name Mitsuo Miyamoto
1st Author's Affiliation Morita Chemical Industries()
2nd Author's Name Naohide Kita
2nd Author's Affiliation Morita Chemical Industries
3rd Author's Name Shoichi Ishida
3rd Author's Affiliation Morita Chemical Industries
4th Author's Name Toshio Tatsuno
4th Author's Affiliation Morita Chemical Industries
Date 1993/4/22
Paper # SDM93-2
Volume (vol) vol.93
Number (no) 7
Page pp.pp.-
#Pages 6
Date of Issue