| Presentation | 1993/8/24 SiO_2 Films Prepared by Liquid Phase Deposition Nobuo Haneji, Kenji Fukumitsu, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Liquid phase deposition is the method to deposit the SiO_2 films on the substrates in the hydrofluosic acid solution super- saturated with silica.This process enables to deposit the SiO_2 films at room temperature on the large substrates,and so suitable for the gate insulator films and inter-layer insulator films as the low temperature process,glasses with organic molecules,and so on. This report describes the structure and the electric properties of the liquid phase deposited SiO_2 films.and the enhanced deposition rate by the electric field. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Liquid Phase Deposition / SiO_2 Films / Low Temperature Process / MOS devices |
| Paper # | SDM93-86 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 1993/8/24(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | SiO_2 Films Prepared by Liquid Phase Deposition |
| Sub Title (in English) | |
| Keyword(1) | Liquid Phase Deposition |
| Keyword(2) | SiO_2 Films |
| Keyword(3) | Low Temperature Process |
| Keyword(4) | MOS devices |
| 1st Author's Name | Nobuo Haneji |
| 1st Author's Affiliation | Faculty of Engineering,Yokohama National University() |
| 2nd Author's Name | Kenji Fukumitsu |
| 2nd Author's Affiliation | Faculty of Engineering,Yokohama National University |
| Date | 1993/8/24 |
| Paper # | SDM93-86 |
| Volume (vol) | vol.93 |
| Number (no) | 192 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |