Presentation 1993/8/24
pH Controlled chemical mechanical polishing for ultra thin bonded SOI wafers
Fumitoshi Sugimoto, Hiroshi Horie, Yoshihiro Arimoto, Takashi Ito,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A pH-cntrolled chemical mechanical polishing method has been developed for a large-area ultra-thin SOI layers with uniform thickness.Using a polishing reagent with both pH and the colloidal silica concentration lowered,as well as grooves fabricated on the SOI layer to expose the insulator oxide,polishing rate clearly dropped leaving a 0.1-μm-thick SOI layer.It is thought that the lo wer local pH of the reagent,caused by contact between the reagent and the insulator oxide,reduced the colloidal silica activity nearby the groove.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) polishing / colloidalsilica / pH / SOI
Paper # SDM93-84
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Conference Information
Committee SDM
Conference Date 1993/8/24(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) pH Controlled chemical mechanical polishing for ultra thin bonded SOI wafers
Sub Title (in English)
Keyword(1) polishing
Keyword(2) colloidalsilica
Keyword(3) pH
Keyword(4) SOI
1st Author's Name Fumitoshi Sugimoto
1st Author's Affiliation ULSI Technology Laboratory,Fujitsu Laboratories Ltd.()
2nd Author's Name Hiroshi Horie
2nd Author's Affiliation ULSI Technology Laboratory,Fujitsu Laboratories Ltd.
3rd Author's Name Yoshihiro Arimoto
3rd Author's Affiliation ULSI Technology Laboratory,Fujitsu Laboratories Ltd.
4th Author's Name Takashi Ito
4th Author's Affiliation ULSI Technology Laboratory,Fujitsu Laboratories Ltd.
Date 1993/8/24
Paper # SDM93-84
Volume (vol) vol.93
Number (no) 192
Page pp.pp.-
#Pages 7
Date of Issue